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Doping of semiconductor nanowires

Published online by Cambridge University Press:  22 August 2011

Jesper Wallentin  and
Magnus T. Borgström
Jesper Wallentin*
Affiliation:
Division of Solid State Physics, Lund University, SE-221 00 Lund, Sweden
Magnus T. Borgström
Affiliation:
Division of Solid State Physics, Lund University, SE-221 00 Lund, Sweden
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the boundaries of our current understanding.

Keywords

DopantEpitaxyElectrical properties
Type
Reviews
Information
Journal of Materials Research , Volume 26 , Issue 17: Focus Issue: Nanowires: Fundamentals and Applications , 14 September 2011 , pp. 2142 - 2156
Copyright
Copyright © Materials Research Society 2011

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Footnotes

This section of Journal of Materials Research is reserved for papers that are reviews of literature in a given area.

References

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