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Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

Published online by Cambridge University Press:  31 January 2011

Yutaka Tokuda ,
Nobuji Kobayashi ,
Yajiro Inoue ,
Akira Usami  and
Makoto Imura
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Nobuji Kobayashi
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Yajiro Inoue
Affiliation:
Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
Akira Usami
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466, Japan
Makoto Imura
Affiliation:
Technical Division, Japan Silicon Co. Ltd., Noda 278, Japan
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Abstract

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Type
Materials Communications
Information
Journal of Materials Research , Volume 4 , Issue 2 , April 1989 , pp. 241 - 243
Copyright
Copyright © Materials Research Society 1989

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References

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