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Combustion synthesis of α–Si3N4 whiskers

Published online by Cambridge University Press:  31 January 2011

Yong-Ge Cao ,
Chang-Chun Ge ,
Zhang-Jian Zhou  and
Jiang-Tao Li
Yong-Ge Cao
Affiliation:
Laboratory of Special Ceramics and P/M, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Chang-Chun Ge
Affiliation:
Laboratory of Special Ceramics and P/M, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Zhang-Jian Zhou
Affiliation:
Laboratory of Special Ceramics and P/M, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Jiang-Tao Li
Affiliation:
Laboratory of Special Ceramics and P/M, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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Abstract

α–Si3N4 whiskers were fabricated first through combustion synthesis (CS) technology. The as-synthesized crystals with [001] as the elongated axis contain a large amount of linear defects including (a + b)-type, (a + b + c)-type, and c-type of dislocations. The growth of α–Si3N4 whiskers is mainly controlled by vapor-condensation (VC) mechanism. Special additive plays an important role in promoting the growth of α–Si3N4 whiskers and suppressing the phase transformation of α–Si3N4 to β–Si3N4.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 876 - 880
Copyright
Copyright © Materials Research Society 1999

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References

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