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Characterization of interface quality between various low-temperature oxides and Si using room-temperature-photoluminescence and Raman spectroscopy

Published online by Cambridge University Press:  09 May 2013

Shiu-Ko Jang Jian ,
Chih-Cherng Jeng ,
Ting-Chun Wang ,
Chih-Mu Huang ,
Ying-Lang Wang  and
Woo Sik Yoo
Shiu-Ko Jang Jian
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, Tainan, 741-44, Taiwan
Chih-Cherng Jeng
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, Tainan, 741-44, Taiwan
Ting-Chun Wang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, Tainan, 741-44, Taiwan
Chih-Mu Huang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, Tainan, 741-44, Taiwan
Ying-Lang Wang
Affiliation:
Taiwan Semiconductor Manufacturing Company, Ltd., Science-Based Industrial Park, Tainan, 741-44, Taiwan
Woo Sik Yoo*
Affiliation:
WaferMasters, Inc., San Jose, California 95112
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The quality of interface between ultrathin silicon dioxide films and their silicon (Si) wafers was characterized using room-temperature photoluminescence (RTPL) and Raman spectroscopy. Three types of low-temperature (350 °C or room temperature) oxide films on Si grown by different techniques were measured and compared with Si wafers having native oxide and high-temperature thermally grown oxide films. Significant RTPL spectra and intensity variations were measured among low-temperature oxide films. Very strong excitation wave length dependence of RTPL spectra and intensity was observed from the low-temperature oxide films on Si whereas the RTPL spectra and intensity from Si with native oxide and thermally grown oxide films were consistent. Stress in the Si lattice, with different low-temperature oxide layers, showed noticeable differences depending on the oxidation technique used. Key device performance parameters of image sensor devices fabricated using three different low-temperature oxide films showed good correlation with the RTPL and Raman measurement results. The RTPL spectra and Raman shifts are very sensitive to the quality of the oxide/Si interface and can be used as an interface quality monitoring technique.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 9 , 14 May 2013 , pp. 1269 - 1277
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Ng, K.K.: Complete Guide to Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 2002). Chap. 22.Google Scholar
Nicollian, E.H. and Brews, J.R.: MOS (Metal Oxide Semiconductor) Physics and Technology (John Wiley & Sons, New York, 1982). Chap. 1.Google Scholar
Wang, L.K., Wen, D.S., Bright, A.A., Nguyen, T.N., and Chang, W.: Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide. IEDM ’89 Technical Digest, Washington, D.C., 1989, p. 463.Google Scholar
Hiller, D., Zierold, R., Bachmann, J., Alexe, M., Yang, Y., Gerlach, J.W., Stesmans, A., Jivanescu, M., Müller, U., Vogt, J., Hilmer, H., Löper, P., Künle, M., Munnik, F., Nielsch, K., Zacharias, M., Brown, M.P., and Austin, K.: Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties. J. Appl. Phys. 107, 064314 (2010).CrossRefGoogle Scholar
Tajima, M., Ikebe, M., Ohshita, Y., and Ogura, A.: Photoluminescence analysis of iron contamination effect in multicrystalline silicon wafers for solar cells. J. Electron. Mater. 39(6), 747 (2010).CrossRefGoogle Scholar
Schroder, D.K.: Semiconductor Material and Device Characterization, 3rd ed. (Wiley Interscience, New Jersey, 2006). Chap. 10.Google Scholar
Konishi, T., Yao, T., Tajima, M., Ohshima, H., Ito, H., and Hattori, T.: Characterization of HF-treated Si surfaces by photoluminescence spectroscopy. Jpn. Appl. Phys. 31, L1216 (1992).CrossRefGoogle Scholar
Baek, D.H., Kim, S.B., and Schroder, D.K.: Epitaxial silicon minority carrier diffusion length by photoluminescence. J. Appl. Phys. 104, 054503 (2008).CrossRefGoogle Scholar
Takashima, S., Yoshimoto, M., and Yoo, W.S.: Photoluminescence study on ion implanted silicon after rapid thermal annealing. ECS Trans. 19(1), 147 (2009).CrossRefGoogle Scholar
Yoo, W.S., Ueda, T., Ishigaki, T., and Kang, K.: Multi-wavelength Raman and photoluminescence characterization of implanted silicon before and after rapid thermal annealing. Ion implantation technology. AIP Conf. Proc. 1321, 204 (2010).Google Scholar
Yoo, W.S., Ueda, T., Ishigaki, T., Kang, K., Fukumoto, M., Hasuike, N., Harima, H., and Yoshimoto, M.: Non-contact and non-destructive characterization alternatives of ultra-shallow implanted silicon PN junctions by multi-wavelength Raman and photoluminescence spectroscopy. J. Electrochem. Soc. 158(1), H80 (2011).CrossRefGoogle Scholar
Yoo, W.S., Ueda, T., Ishigaki, T., Kang, K., Rouh, K.B., Kim, C.H., and Eun, Y.S.: Multi-wavelength Raman and photoluminescence characterization of implanted n+/p junctions under various rapid thermal annealing conditions. AIP Conf. Proc. 1496, 159 (2012).Google Scholar
De Wolf, I.: Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Semicond. Sci. Technol. 11, 139 (1996).CrossRefGoogle Scholar
De Wolf, I.: Raman spectroscopy about chips and stress. Spectrosc. Eur. 15/2, 6 (2003).Google Scholar
Yoo, W.S., Fukada, T., Kuribayashi, H., Kitayama, H., Takahashi, N., Enjoji, K., and Sunohara, K.: Single wafer furnace and its thermal processing applications. Jpn. J. Appl. Phys. Lett. 39(7A), L694 (2000).CrossRefGoogle Scholar
Yoo, W.S., Fukada, T., Kuribayashi, H., Kitayama, H., Takahashi, N., Enjoji, K., and Sunohara, K.: Design of single-wafer furnace and its rapid thermal processing applications. Jpn. J. Appl. Phys. 39, 6143 (2000).CrossRefGoogle Scholar
Yoo, W.S., Kang, K., Ueda, T., and Ishigaki, T.: Design of multi-wavelength micro Raman spectroscopy system and its semiconductor stress depth profiling applications. Appl. Phys. Exp. 2, 116502 (2009).CrossRefGoogle Scholar
Trigg, A.D., Yu, L.H., Cheng, C.K., Kumar, R., Kwong, D.L., Ueda, T., Ishigaki, T., Kang, K., and Yoo, W.S.: Three dimensional stress mapping of silicon surrounded by copper filled through silicon vias using polychromator-based multi-wavelength micro Raman spectroscopy. Appl. Phys. Exp. 3, 086601 (2010).CrossRefGoogle Scholar
Gambino, J., Vanslette, D., Webb, B., Luce, C., Ueda, T., Ishigaki, T., Kang, K., and Yoo, W.S.: Stress characterization of tungsten-filled through silicon via arrays using very high resolution multi-wavelength Raman spectroscopy. ECS Trans. 35(2), 105 (2011).CrossRefGoogle Scholar
Yoo, W., Ishigaki, T., Ueda, T., Kajiwara, J., Kang, K., Hung, P.Y., Ang, K.W., and Min, B.G.: Characterization of strain-engineered Si:C epitaxial layers on Si substrates. ECS Trans. 45(6), 23 (2012).CrossRefGoogle Scholar
Bigas, M., Cabruja, E., Forest, J., and Salvi, J., Review of CMOS image sensors. Microelectron. J. 37, 433 (2006).CrossRefGoogle Scholar
Theuwissen, A.J.P.: CMOS image sensors: State-of-the-art. Solid State Electron. 52, 1401 (2008).CrossRefGoogle Scholar
McColgin, W.C., Lavine, J.P., and Stancampiano, C.V.: Self-analysis of CCD image sensors using dark current spectroscopy. 1993 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Waterloo, Ontario, Canada, 1993.Google Scholar
McColgin, W.C., Lavine, J.P., and Stancampiano, C.V.: Dark current spectroscopy of metals in silicon. Mat. Res. Soc. Symp. Proc. 442, 187 (1997).CrossRefGoogle Scholar
Webster, E.A.G., Nicol, R., Grant, L., and Renshaw, D.: Validated dark current spectroscopy on a per-pixel base in CMOS image sensors. Proceedings of the International Image Sensor Workshop (IISW), Bergen (Norway), 26–28 July, 2009.Google Scholar
Webster, E.A.G., Nicol, R., Grant, L., and Renshaw, D.: Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors. IEEE Trans. Electron. Devices 57(9), 2176 (2010).CrossRefGoogle Scholar
Hung, K.K., Ko, P.K., Hu, C., and Cheng, Y.C.: Random telegraph noise of deep-submicrometer MOSFET’s. IEEE Electron. Device Lett. 11(2), 90 (1990).CrossRefGoogle Scholar
Tega, N., Miki, H., Pagette, F., Frank, D.J., Ray, A., Rooks, M.J., Haensch, W., and Torii, K.: Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm. VLSI Technology Symposium, Washington, D.C., 2009, p. 50.Google Scholar
Realov, S. and Shepard, K.: Random telegraph noise in 45-nm CMOS: Analysis using an on-chip test and measurement system. IEDM Tech. Dig. 2010, p. 624.Google Scholar