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Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures

Published online by Cambridge University Press:  03 March 2011

Ji-Yong Park ,
Hye-Hyang Park ,
Ki-Yong Lee  and
Ho-Kyoon Chung
Ji-Yong Park
Affiliation:
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea, Korea
Hye-Hyang Park
Affiliation:
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea, Korea
Ki-Yong Lee
Affiliation:
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea, Korea
Ho-Kyoon Chung
Affiliation:
Technology Development Team 1, Corporate R&D Center, Samsung SDI Co., Ltd., 428-5, Gongse-Ri, Kiheung-Eup, Yongin-City, Gyeonggi-Do, 449-902, Korea, Korea
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Abstract

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.

Keywords

Laser annealingPolycrystalElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 481 - 487
Copyright
Copyright © Materials Research Society 2004

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