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Characteristics of Alumina Diffusion Barrier Films on Hastelloy

Published online by Cambridge University Press:  03 March 2011

I. Usov ,
P. Arendt ,
L. Stan ,
DePaula R. ,
H. Wang ,
S. Foltyn  and
P. Dowden
I. Usov
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
P. Arendt
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
L. Stan
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
DePaula R.
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
H. Wang
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
S. Foltyn
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
P. Dowden
Affiliation:
Los Alamos National Laboratory, MST-STC, Los Alamos, New Mexico 87545
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Abstract

The diffusion behavior of elements constituting Hastelloy C-276 (C, Si, Mn, Co, W, Fe, Cr, Mo, and Ni) in alumina films was investigated using secondary ion mass spectroscopy. The films were deposited by ion-beam-assisted deposition and annealed in vacuum over a temperature range of 500–1000 °C. Characterization of film microstructure was performed using transmission electron microscopy and selected area diffraction analyses. The films were predominantly amorphous with alumina nanocrystallites nonuniformly dispersed throughout the volume both before and after annealing. A relatively wide interface region between the Hastelloy substrate and alumina film was formed in the as-deposited sample due to ion beam mixing. No diffusion of any of the substrate elements was observed after annealing, except for Mn, Cr, and Ni. The impurity depth distributions consisted of two components, which differed by several orders of magnitude with respect to diffusion coefficient and solubility. Activation energies and temperature dependencies of the diffusion coefficients were determined, and a diffusion mechanism was discussed.

Keywords

DiffusionIon-beam assisted depositionSuperconductor
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 4 , April 2004 , pp. 1175 - 1180
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Wang, C.P., Do, K.B., Beasley, M.R., Geballe, T.H. and Hammond, R.H.: Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia. J. Appl. Phys. 71, 2955 (1997).Google Scholar
2Foltyn, S.R., Arendt, P.N., Jia, Q.X., Wang, H., MacManus-Driscoll, J.L., Kreiskott, S., DePaula, R.F., Stan, L., Groves, J.R. and Dowden, P.C.: Strongly coupled critical current density values achieved in Y1Ba2Cu3O7 coated conductors with near-single-crystal texture. Appl. Phys. Lett. 82, 4519 (2003).CrossRefGoogle Scholar
3Arendt, P.N., Foltyn, S.R., Civali, L., DePaula, R.F., Dowden, P.C., Groves, J.R., Holesinger, T.G., Jia, Q.X., Kreiskott, S.,Stan, L., Usov, I., Wang, H., and Coulter, J.Y.: High critical current YBCO coated conductors based on IBAD MgO (unpublished).Google Scholar
4Jin, S. and Graebner, J.E.: Processing and fabrication techniques for bulk high-Tc superconductors: A critical review. Mater. Sci. Eng. B. 7, 243 (1991).CrossRefGoogle Scholar
5Yan, M.F., Rhodes, W.W. and Gallagher, P.K.: Dopant effects on the superconductivity of YBa2Cu3O7 ceramics. J. Appl. Phys. 63, 821 (1988).CrossRefGoogle Scholar
6Foltyn, S.R., Arendt, P.N., DePaula, R.F., Dowden, P.C., Coulter, J.Y., Groves, J.R., Haussamen, L.N., Winston, L.P., Jia, Q.X. and Maley, M.P.: Development of meter-long YBCO coated conductors produced by ion beam assisted deposition and pulsed laser deposition. Physica C. 341348, 2305 (2000).CrossRefGoogle Scholar
7Kingery, W.D.: Structure and Properties of MgO and Al2O3 Ceramics (The American Vacuum Society, Columbus, Ohio, 1983)Google Scholar
8Stubican, V.S. and Osenbach, J.W. in Structure and Properties of MgO and Al2O3 Ceramics edited by Kingery, W.D. (The American Vacuum Society, Columbus, OH, 1983)Google Scholar
9Moya, E.G., Moya, F., Sami, A., Juve, D., Treheux, D. and Grattepain, C.: Diffusion of chromium in alumina single crystals. Philos. Mag. A. 72, 861 (1995).CrossRefGoogle Scholar
10Kreiskott, S., Arendt, P.N., Bronisz, L.E., Foltyn, S.R. and Matias, V.: Continuous electropolishing of Hastelloy substrates for ion-beam assisted deposition of MgO. Supercond. Sci. Technol. 16, 613 (2003).CrossRefGoogle Scholar
11Doolittle, L.R.: Algorithms for the rapid simulation of Rutherford backscattering spectra. Nucl. Instrum. Meth. Phys. Res. B. 9, 344 (1985).CrossRefGoogle Scholar
12Gutierrez, G. and Johansson, B.: Molecular dynamics study of structural properties of amorphous Al2O3. Phys. Rev. B65, 104202 (2002).CrossRefGoogle Scholar
13Shaw, D.: Atomic Diffusion in Semiconductors (Plenum Press, London, U.K., 1973)CrossRefGoogle Scholar
14Boltaks, B.I.: Diffusion and Point Defects in Semiconductors (Nauka, Lening, Russia, 1963 , in Russian)Google Scholar