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The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

Published online by Cambridge University Press:  31 January 2011

X.D. Zhang ,
X.J. Meng ,
J.L. Sun ,
T. Lin ,
J.H. Ma ,
J.H. Chu ,
N. Wang  and
Joonghoe Dho
X.D. Zhang*
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; and Department of Physics, Kyungpook National University, Daegu 702-701, Korea
X.J. Meng
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.L. Sun
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
T. Lin
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.H. Ma
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.H. Chu*
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; and Laboratory for Polar Materials and Devices, East China Normal University, Shanghai 200062, People’s Republic of China
N. Wang
Affiliation:
Department of Physics and Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
Joonghoe Dho
Affiliation:
Department of Physics, Kyungpook National University, Daegu 702-701, Korea
*
a) Address all correspondence to these authors. e-mail: [email protected]
b) Address all correspondence to these authors. e-mail: [email protected]
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Abstract

The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

Keywords

Crystal growthFerroelectricityPhase transformation
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 11 , November 2008 , pp. 2846 - 2853
Copyright
Copyright © Materials Research Society 2008

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