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Wideband transformer-coupled E-band power amplifier in 90 nm CMOS

Published online by Cambridge University Press:  21 December 2012

Igor Gertman  and
Eran Socher
Igor Gertman
Affiliation:
School of Electrical Engineering, University of Tel-Aviv, Tel Aviv 69978, Israel
Eran Socher*
Affiliation:
School of Electrical Engineering, University of Tel-Aviv, Tel Aviv 69978, Israel
*
Corresponding author: Dr. E. Socher Email: [email protected]
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Abstract

In this work, the design of the wideband millimeter-wave power amplifier for multiband communication is presented. In order to achieve compact, simple and robust design, a differential cascade transformer-coupled topology is used. The amplifier is implemented in 90 nm low-leakage CMOS technology and achieves 3 dB bandwidth of 8 GHz (from 60 to 68 GHz) and a peak gain of 18 dB. The PO1dB is better than 5 dBm from 58 to 80 GHz, and peak output power is 11.9 dBm with 1 dB flatness from 62 to 77 GHz. The chip consumes an area of 0.25 mm2 including bond pads and DC current of 125 mA from a 2.2 V supply.

Keywords

CMOSPower amplifierE-bandV-bandTransformer couplingCascadeDifferential
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 1: Special Issue on the German RoCC Project , February 2013 , pp. 71 - 75
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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