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Wideband transformer-coupled E-band power amplifier in 90 nm CMOS

Published online by Cambridge University Press:  21 December 2012

Igor Gertman  and
Eran Socher
Igor Gertman
Affiliation:
School of Electrical Engineering, University of Tel-Aviv, Tel Aviv 69978, Israel
Eran Socher*
Affiliation:
School of Electrical Engineering, University of Tel-Aviv, Tel Aviv 69978, Israel
*
Corresponding author: Dr. E. Socher Email: [email protected]
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Abstract

In this work, the design of the wideband millimeter-wave power amplifier for multiband communication is presented. In order to achieve compact, simple and robust design, a differential cascade transformer-coupled topology is used. The amplifier is implemented in 90 nm low-leakage CMOS technology and achieves 3 dB bandwidth of 8 GHz (from 60 to 68 GHz) and a peak gain of 18 dB. The PO1dB is better than 5 dBm from 58 to 80 GHz, and peak output power is 11.9 dBm with 1 dB flatness from 62 to 77 GHz. The chip consumes an area of 0.25 mm2 including bond pads and DC current of 125 mA from a 2.2 V supply.

Keywords

CMOSPower amplifierE-bandV-bandTransformer couplingCascadeDifferential
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 1: Special Issue on the German RoCC Project , February 2013 , pp. 71 - 75
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

[1]RF and A/MS Technologies for Wireless Technologies, ITRS Roadmap., available at: http://www.itrs.net/.Google Scholar
[2]Jiashu, C.; Niknejad, A.M.: A compact 1 V 18.6 dBm 60 GHz power amplifier in 65 nm CMOS, in IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers, San Francisco, USA, 2011.Google Scholar
[3]Kurita, N.; Kondoh, H.: 60 GHz and 80 GHz wide band power amplifier MMICs in 90 nm CMOS technology, in IEEE Radio Frequency Integrated Circuits Symp., Boston, USA, 2009.Google Scholar
[4]Suzuki, T.; Kawano, Y.; Sato, M.; Hirose, T.; Joshin, K.: 60 and 77 GHz Power Amplifiers in Standard 90 nm CMOS, in IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers, San Francisco, USA, 2008.Google Scholar
[5]Chan, W.L.; Long, J.R.; Spirito, M.; Pekarik, J.J.: A 60 GHz-band 1 V 11.5 dBm power amplifier with 11% PAE in 65 nm CMOS, in IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers, San Francisco, USA, 2009.Google Scholar
[6]Asadi, S.; Yagoub, M.C.E.: Design of an E-band high power amplifier for wireless high data rate communications, in Canadian Conf. Electrical and Computer Engineering, Newfoundland, Canada, 2009.Google Scholar
[7]Dickson, T.O. et al. : The invariance of characteristic current densities in Nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks. IEEE J. Solid-State Circuits, 41 (2006) 1830–1845.CrossRefGoogle Scholar
[8]Doan, C.H.; Emami, S.; Niknejad, A.M.; Brodersen, R.W.: Millimeter-wave CMOS design. IEEE J. Solid-State Circuits, 40 (2005) 144–155.Google Scholar
[9]Niknejad, A.M.: Electromagnetics for High-speed Analog and Digital Communication Circuits, Cambridge University Press, Cambridge, 2007.Google Scholar