Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-08T00:28:08.573Z Has data issue: false hasContentIssue false
  • English
  • Français

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Published online by Cambridge University Press:  18 February 2013

Jérôme Chéron ,
Michel Campovecchio ,
Denis Barataud ,
Tibault Reveyrand ,
Michel Stanislawiak ,
Philippe Eudeline  and
Didier Floriot
Jérôme Chéron
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Michel Campovecchio*
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Denis Barataud
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Tibault Reveyrand
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France
Michel Stanislawiak
Affiliation:
Thales Air System, ZI du Mont Jarret, Ymare, 76520 Boos, France
Philippe Eudeline
Affiliation:
Thales Air System, ZI du Mont Jarret, Ymare, 76520 Boos, France
Didier Floriot
Affiliation:
UMS, Parc Silic de Villebon-Courtaboeuf, 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France
*
Corresponding author: M. Campovecchio Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50 Ω environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package.

Keywords

BandwidthHarmonic impedancesHEMTPAES-band
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Issue 4 , August 2013 , pp. 437 - 445
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Cripps, S.C.: RF Power Amplifiers for Wireless Communications, 2nd ed., Artech House Microwave Library, Norwood, MA, USA, 2006.Google Scholar
[2]Woo, Y.Y.; Yang, Y.; Kim, B.: Analysis and experiments for high efficiency class-F and inverse class-F power amplifiers. IEEE Trans. Microw. Theory Tech., 54 (2006), 1969–1974.Google Scholar
[3]Raab, F.H.: Maximum efficiency and output of class-F power amplifiers. IEEE Trans. Microw. Theory Tech., 49 (2001), 1162–1166.Google Scholar
[4]Wright, P.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.: A methodology for realizing high efficiency Class-J in a linear and broadband PA. IEEE Trans. Microw. Theory Tech., 57 (2009), 3196–3204.Google Scholar
[5]Carruba, V.; Lees, J.; Benedikt, J.; Tasker, J.; Cripps, S.C.: A novel highly efficient broadband continuous Class-F RFPA delivering 74% average efficiency for an octave bandwidth, in IEEE/MTT-S Int. Microwave Symp., Baltimore, 2011, 1–4.Google Scholar
[6]Chéron, J. et al. : Harmonic control in package of power GaN transistors for high efficiency and wideband performances in S-band, in European Microwave Integrated Circuits Conf., Manchester, 2011, 550–553.Google Scholar
[7]Liang, T.; Plá, J.A.; Aaen, P.H.; Mahalingam, M.: Equivalent-circuit modeling and verification of metal–ceramic packages for RF and microwave power transistors. IEEE Trans. Microw. Theory Tech., 47 (6) (1999), 709–712.Google Scholar
[8]Chéron, J. et al. : Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band. Int. J. Microw. Wirel. Tech., 4 (05) (2012), 495–503.Google Scholar
[9]Jardel, O. et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12) (2007), 2660–2669.Google Scholar
[10]Reveyrand, T.; Popovic, Z.: A new method to measure pulsed RF time domain waveforms with a sub-sampling system, in IEEE/MTT-S Int. Microwave Symp., Montreal, 2012, 1–3.Google Scholar
[11]Chéron, J. et al. : Over 70% PAE packaged GaN HEMT through wideband internal matching at second harmonic in S-band. Electron. Lett., 48 (13) (2012), 770–772.Google Scholar
[12]Miwa, S. et al. : A 67% PAE, 100 W GaN power amplifier with on-chip harmonic tuning circuits for C-band space applications, in IEEE/MTT-S Int. Microwave Symp., Baltimore, 2011, 1–4.Google Scholar
[13]Yamasaki, T. et al. : A 68% efficiency, C-Band 100 W GaN power amplifier for space applications, in IEEE/MTT-S Int. Microwave Symp., May 2010, 1384–1387.Google Scholar
[14]Tuffy, N.; Zhu, A.; Brazil, T.J.: Class-J RF power amplifier with wideband harmonic suppression, in IEEE/MTT-S Int. Microwave Symp., June 2011, 1–4.Google Scholar
[15]Nilsson, J.; Billstrom, N.; Rorsman, N.; Romanini, P.; S band discrete and MMIC power amplifiers, in European Microwave Integrated Circuits Conf., Roma, September 2009, 1848–1851.Google Scholar
[16]Campbell, C.F.; Dumka, D.C.: S-band high efficiency Class-E power amplifier MMICs manufactured with a production released GaN on SiC process, in GOMAC-Tech Digest, 2009.Google Scholar
[17]Motoi, K.; Matsunaga, K.; Yamanouchi, S.; Kunihiro, K.; Fukaishi, M.: A 72% PAE, 95-W, single-chip GaN FET S-band inverse Class-F power amplifier with a harmonic resonant circuit, in IEEE/MTT-S Int. Microwave Symp., Montreal, June 2012, 1–3.Google Scholar
[18]Jardel, O. et al. : A 30 W, 46% PAE S-band GaN HEMT MMIC power amplifier for radar applications, in European Microwave Conf. 2012, Amsterdam, october 2012, 1019–1022.Google Scholar
[19]Chéron, J. et al. : Wideband 50 W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band, in IEEE/MTT-S Int. Microwave Symp., Montreal, June 2012, 1–3.Google Scholar