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Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Published online by Cambridge University Press:  21 February 2011

Hiroshi Otsuka ,
Toshiyuki Oishi ,
Koji Yamanaka ,
Mattias Thorsell ,
Kristoffer Andersson ,
Akira Inoue ,
Yoshihito Hirano  and
Iltcho Angelov
Hiroshi Otsuka*
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Toshiyuki Oishi
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Koji Yamanaka
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Mattias Thorsell
Affiliation:
Department of Microtechnology and Nanoscience (MC2), Microwave Electrics Laboratory, GHz Centre, Chalmers University of Technology, Gothenburg SE-41296, Gothenburg, Sweden.
Kristoffer Andersson
Affiliation:
Department of Microtechnology and Nanoscience (MC2), Microwave Electrics Laboratory, GHz Centre, Chalmers University of Technology, Gothenburg SE-41296, Gothenburg, Sweden.
Akira Inoue
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Yoshihito Hirano
Affiliation:
Information Technology R&D Center, Mitsubishi Electric Corporation 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501, Japan. Phone: + 81 467 41 2692.
Iltcho Angelov
Affiliation:
Department of Microtechnology and Nanoscience (MC2), Microwave Electrics Laboratory, GHz Centre, Chalmers University of Technology, Gothenburg SE-41296, Gothenburg, Sweden.
*
Corresponding author: H. Otsuka Email: [email protected]
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Abstract

A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.

Keywords

Transistor modelsGaN HEMTSimulationPower amplifiersPhysical modelingMicrowave
Type
Research Article
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Issue 1 , February 2011 , pp. 25 - 33
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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