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Reliability issues of Gallium Nitride High Electron Mobility Transistors

Published online by Cambridge University Press:  23 March 2010

Gaudenzio Meneghesso ,
Matteo Meneghini ,
Augusto Tazzoli ,
Nicolo' Ronchi ,
Antonio Stocco ,
Alessandro Chini  and
Enrico Zanoni
Gaudenzio Meneghesso*
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Matteo Meneghini
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Augusto Tazzoli
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Nicolo' Ronchi
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Antonio Stocco
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
Alessandro Chini
Affiliation:
Department of Information Engineering, University of Modena and Reggio Emilia, Via Vignolese 905, 41100 Modena, Italy.
Enrico Zanoni
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6B, 35131 Padova, Italy.
*
Corresponding author: G. Meneghesso Email: [email protected]
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Abstract

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Keywords

GaN HEMT ReliabilityDamageElectroluminescenceHot electronsTrapping
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 39 - 50
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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