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J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe

Published online by Cambridge University Press:  26 May 2015

Stefan Malz ,
Bernd Heinemann ,
Rudolf Lachner  and
Ullrich R. Pfeiffer
Stefan Malz*
Affiliation:
IHCT, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119 Wuppertal, Germany
Bernd Heinemann
Affiliation:
IHP GmbH, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Rudolf Lachner
Affiliation:
Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany
Ullrich R. Pfeiffer
Affiliation:
IHCT, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119 Wuppertal, Germany
*
Corresponding author: S. Malz Email: [email protected]
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Abstract

This paper presents two J-band amplifiers in different 0.13 μm SiGe technologies: a small signal amplifier (SSA) in a technology in which never before gain has been shown over 200 GHz; and a low noise amplifier (LNA) design for 230 GHz applications in an advanced SiGe HBT technology with higher fT/fmax, demonstrating the combination of high gain, low noise, and low power in a single amplifier. Both circuits consist of a four-stage pseudo-differential cascode topology. By employing series–series feedback at the single-stage level the small-signal gain is increased, enabling circuit operation at high-frequencies and with improved efficiency, while maintaining unconditional stability. The SSA was fabricated in a SiGe BiCMOS technology by Infineon with fT/fmax values of 250/360 GHz. It has measured 19.5 dB gain at 212 GHz with a 3 dB bandwidth of 21 GHz. It draws 65 mA from a 3.3 V supply. On the other hand, a LNA was designed in a SiGe BiCMOS technology by IHP with fT/fmax of 300/450 GHz. The LNA has measured 22.5 dB gain at 233 GHz with a 3 dB bandwidth of 10 GHz and a simulated noise figure of 12.5 dB. The LNA draws only 17 mA from a 4 V supply. The design methodology, which led to these record results, is described in detail with the LNA as an example.

Keywords

Low noise and communication receiversCircuit design and applications
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 7 , Special Issue 3-4: European Microwave Week 2014 , June 2015 , pp. 339 - 347
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

REFERENCES

[1] Pfeiffer, U. et al. : SiGe transmitter and receiver circuits for emerging terahertz applications, in CSICS 2014, San Diego, October 2014, 1–4.Google Scholar
[2] Sarmah, N.; Heinemann, B.; Pfeiffer, U.: 235–275 GHz (×16) Frequency multiplier chains with up to 0 dBm peak output power and low DC power consumption, in RFIC Symp., 2014, 181–184.Google Scholar
[3] Statnikov, K.; Sarmah, N.; Grzyb, J.; Malz, S.; Heinemann, B.; Pfeiffer, U.: A 240 GHz circular polarized FMCW radar based on a SiGe transceiver with a lens-integrated on-chip antenna, in EuRAD 2014, Rome, October 2014, 447–450.Google Scholar
[4] Dacquay, E. et al. : D-Band total power radiometer performance optimization in an SiGe HBT technology. IEEE Trans. Microw. Theory Tech., 60 (3) (2012), 813–826.Google Scholar
[5] Heinemann, B. et al. : SiGe HBT technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay, in IEEE IEDM, San Francisco, California, December 2010, 30.5.1–30.5.4.Google Scholar
[6] Friis, H.T.: Noise figure of radio receivers. Proc. IRE, 32 (1944), 419–422.Google Scholar
[7] Dilacher, F.; Tiebout, M.; Lachner, R.; Knapp, H.; Aufinger, K.; Sansen, W.: SiGe BiCMOS technology for active safety systems, in VLSI-DAT 2014, Hsinchu, April 2014, 1–4.Google Scholar
[8] Hamidipour, A.; Jahn, M.; Meister, T.F.; Aufinger, K.; Stelzer, A.: A comparison of power amplifiers in two generations of SiGe:C technologies, in GeMiC 2012, Ilmenau, March 2012, 1–3.Google Scholar
[9] Furqan, M.; Ahmed, F.; Stelzer, A.: A SiGe-based E-band power amplifier with 17.7 dBm output power and 325-GHz GBW, in EuMIC 2014, Rome, October 2014, 57–60.Google Scholar
[10] Schmalz, K.; Borngräber, J.; Mao, Y.; Rücker, H.; Weber, R.: A 245 GHz LNA in SiGe technology. IEEE Microw. Wireless Compon. Lett., 22 (10) (2012), 533–535.Google Scholar
[11] Mao, Y.; Schmalz, K.; Borngräber, J.; Scheytt, J.C.: A 245 GHz CB LNA in SiGe, in Proc. EuMIC, October 2011, 224–227.Google Scholar
[12] Öjefors, E.; Heinemann, B.; Pfeiffer, U.R.: Subharmonic 220- and 320-GHz SiGe HBT receiver front-ends. IEEE Trans. Microw. Theory Techn., 60 (5) (2012), 1397–1404.Google Scholar
[13] Voinigescu, S.P.: Low-Noise Tuned Amplifier Design, in High-Frequency Integrated Circuits, Cambridge University Press, New York, 2013, 443–447.Google Scholar
[14] Gupta, M.: Power gain in feedback amplifiers, a classic revisited. IEEE Trans. Microw. Theory Techn., 40 (5) (1992), 864–879.Google Scholar
[15] Asada, H.; Matsushita, K.; Bunsen, K.; Okada, K.; Matsuzawa, A.: A 60 GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16% PAE, in EuMIC 2011, October 2011, 554–557.Google Scholar
[16] Fan, X.; Zhang, H.; Sánchez-Sinencio, E.: A noise reduction and linearity improvement technique for a differential Cascode LNA. IEEE JSSC, 43 (3) (2008), 588–599.Google Scholar
[17] Singhakowinta, A.; Boothroyd, A.R.: On linear two port amplifiers. IEEE Trans. Circuit Theory, CT-11 (1) (1964), 169.Google Scholar
[18] Hsieh, H.; Lu, L.: A 40 GHz Low Noise Amplifier with a positive-feedback Network in 0.18 μm CMOS. IEEE Trans. Microw. Theory Techn., 57 (8) (2009), 1895–1902.Google Scholar
[19] Gray, P.R.: Instability and the Nyquist Criterion, in Analysis and Design of Analog Integrated Circuits, John Wiley and Sons, Inc., New Jersey, 2010, 626–633.Google Scholar
[20] Kim, H.; Yun, J.; Song, K.; Rieh, J.: SiGe 135 GHz amplifier with inductive positive feedback operating near f max . Electron. Lett., 49 (19) (2013), 1229–1230.Google Scholar
[21] Sarmah, N.; Chevalier, P.; Pfeiffer, U.R.: 160-GHz Power amplifier design in advanced SiGe HBT technologies with P sat in excess of 10 dBm. IEEE Trans. Microw. Theory Techn., 61 (2), (2013), 939–947.Google Scholar
[22] Pozar, D.M.: Amplifier Design Using S Parameters, in Microwave and RF Design of Wireless Systems , John Wiley and Sons, Inc., New York, 2001, 205–207.Google Scholar
[23] Voinigescu, S.P. et al. : A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design. IEEE JSSC, 32 (9) (1997), 1430–1439.Google Scholar