Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-16T07:28:28.826Z Has data issue: false hasContentIssue false
  • English
  • Français

Introduction – TARGET Special issue

Published online by Cambridge University Press:  07 July 2009

Gottfried Magerl
Get access Rights & Permissions [Opens in a new window]

Abstract

An abstract is not available for this content so a preview has been provided. Please use the Get access link above for information on how to access this content.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Introduction
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 2: TARGET , April 2009 , pp. 89
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Magerl, G.; Ivan, S.: The NoE TARGET – success by cooperation. Int. J. Microwave and Wireless Tech., 1 (2009), 91–98.CrossRefGoogle Scholar
[2]Resca, D.; Giacomo, D.V.; Raffo, A.; Cignani, R.; Santarelli, A.; Vannini, G.; Filicori, F.; Schreurs, D.; Medjdoub, F.; Thouvenin, N.; Gaquiere, C.: Nonlinear modeling of InP devices for W-band applications. Int. J. Microwave and Wireless Tech., 1 (2009), 145–151.CrossRefGoogle Scholar
[3]Martin-Guerrero, M.T.; Ducatteau, D.; Camacho-Penalosa, C.; Gaquiere, C.: GaN devices for power amplifier design. Int. J. Microwave and Wireless Tech., 1 (2009), 137–143.CrossRefGoogle Scholar
[4]Kuzmik, J.; Bychikhin, S.; Pichonat, E.; Gaquière, Ch.; Morvan, E.; Kohn, E.; Teyssier, J.-P.; Pogany, D.: Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET, Int. J. Microwave and Wireless Tech., 1 (2009), 153–160.CrossRefGoogle Scholar
[5]Camarchia, V.; Giofre, R.; Magrini, I.; Piazzon, I.; Cidronali, A.; Colantonio, P.; Guerrieri, D.S.; Ghione, G.; Giannini, F.; Pirola, M.; Manes, G.: Concurrent dual-band SiGe HBT power amplifier for Wireless applications. Int. J. Microwave and Wireless Tech., 1 (2009), 117–126.CrossRefGoogle Scholar
[6]Cidronali, A.; Magrini, I.; Giovannelli, N.; Mercanti, M.; Manes, G.: Experimental system level analysis of a concurrent dual-band power amplifier for WiMAX and WCDMA applications. Int. J. Microwave and Wireless Tech., 1 (2009), 99–107.CrossRefGoogle Scholar
[7]Garcia, A.J.; Pedro, C.J.; Cabral, M.P.; Fager, C.; Nemati, M.H.; Zhu, A.; Colantonio, P.: Nonideality sources and implementation considerations in polar transmitters Int. J. Microwave and Wireless Tech., 1 (2009), 109–116.CrossRefGoogle Scholar