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High-power monolithic AlGaN/GaN high electron mobility transistor switches

Published online by Cambridge University Press:  19 June 2009

Vincenzo Alleva ,
Andrea Bettidi ,
Walter Ciccognani ,
Marco De Dominicis ,
Mauro Ferrari ,
Claudio Lanzieri ,
Ernesto Limiti  and
Marco Peroni
Vincenzo Alleva
Affiliation:
Hardware Design Department, Elettronica SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Andrea Bettidi
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Marco De Dominicis*
Affiliation:
Hardware Design Department, Elettronica SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Mauro Ferrari
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Claudio Lanzieri
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Marco Peroni
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
*
Corresponding author: M. De Dominicis E-mail: [email protected]
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Abstract

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

Keywords

AlGaN/GaNMonolithic microwave integrated circuit (MMIC)Power switch
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 339 - 345
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

REFERENCES

[1]Gotch, D.: A review of technological advances in solid-state switches. Microwave J., 50 (2007), 24–34.Google Scholar
[2]Meharry, D.E.; Lender, R.J.; Chu, K.; Gunter, L.L.; Beech, K.E.: Multi-watt wideband MMIC in GaN and GaAs, in IEEE MTT-S Int. Microwave Symp., 3–8 June 2007, 631–634.CrossRefGoogle Scholar
[3]Micovic, M. et al. : Ka-band MMIC power amplifier in GaN HFET technology, in IEEE MTT-S Int. Microwave Symp., vol. 3, 2004, 1653–1656.Google Scholar
[4]Krausse, D. et al. : Robust GaN HEMT low-noise amplifier MMICs for X-band applications, in Proc. 2004 Gallium Arsenide Applications Symp., October 2004, 71–74.Google Scholar
[5]Kaper, V.; Thompson, R.; Prunty, T.; Shealy, J.R.: Monolithic AlGaN/GaN HEMT SPDT switch, in Proc. 2004 Gallium Arsenide Applications Symp., October 2004, 83–86.Google Scholar
[6]Ishida, H. et al. : A high power Tx/Rx switch IC using AlGaN/GaN HFETs, in Int. Electron Device Meeting, December 2003, 23.6.1–23.6.4.Google Scholar
[7]Bettidi, A. et al. : High power GaN-HEMT microwave switches for X-band and wideband applications, in Proc. 2008 IEEE Radio Frequency Integrated Circuits Symp., June 2008, 329–332.Google Scholar
[8]Ciccognani, W.; De Dominicis, M.; Ferrari, M.; Limiti, E.; Peroni, M.; Romanini, P.: High-power monolithic AlGaN/GaN HEMT switch for X-band application. Electron. Lett., 44 (2008), 911–913.CrossRefGoogle Scholar
[9]Alleva, V. et al. : High power microstrip GaN-HEMT switches for microwave applications, in Proc. European Microwave Conf., October 2008, 194–197.CrossRefGoogle Scholar
[10]Ezzeddine, A.; Pengelly, R.; Badawi, H.: A high isolation DC to 18 GHz packaged MMIC SPDT switch, in Proc. 1988 European Microwave Conf., October 1988, 1028–1033.Google Scholar
[11]Bauer, R.F.; Penfield, P. Jr.: De-embedding and unterminating. IEEE Trans. Microwave Theory Tech., 22 (1974), 282–288.CrossRefGoogle Scholar