Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-16T09:21:35.903Z Has data issue: false hasContentIssue false
  • English
  • Français

High-power monolithic AlGaN/GaN high electron mobility transistor switches

Published online by Cambridge University Press:  19 June 2009

Vincenzo Alleva ,
Andrea Bettidi ,
Walter Ciccognani ,
Marco De Dominicis ,
Mauro Ferrari ,
Claudio Lanzieri ,
Ernesto Limiti  and
Marco Peroni
Vincenzo Alleva
Affiliation:
Hardware Design Department, Elettronica SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Andrea Bettidi
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Marco De Dominicis*
Affiliation:
Hardware Design Department, Elettronica SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Mauro Ferrari
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Claudio Lanzieri
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, 00133 Rome, Italy.
Marco Peroni
Affiliation:
SELEX Sistemi Integrati SpA, Via Tiburtina Valeria, 00131 Rome, Italy.
*
Corresponding author: M. De Dominicis E-mail: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

Keywords

AlGaN/GaNMonolithic microwave integrated circuit (MMIC)Power switch
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 339 - 345
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Gotch, D.: A review of technological advances in solid-state switches. Microwave J., 50 (2007), 24–34.Google Scholar
[2]Meharry, D.E.; Lender, R.J.; Chu, K.; Gunter, L.L.; Beech, K.E.: Multi-watt wideband MMIC in GaN and GaAs, in IEEE MTT-S Int. Microwave Symp., 3–8 June 2007, 631–634.CrossRefGoogle Scholar
[3]Micovic, M. et al. : Ka-band MMIC power amplifier in GaN HFET technology, in IEEE MTT-S Int. Microwave Symp., vol. 3, 2004, 1653–1656.Google Scholar
[4]Krausse, D. et al. : Robust GaN HEMT low-noise amplifier MMICs for X-band applications, in Proc. 2004 Gallium Arsenide Applications Symp., October 2004, 71–74.Google Scholar
[5]Kaper, V.; Thompson, R.; Prunty, T.; Shealy, J.R.: Monolithic AlGaN/GaN HEMT SPDT switch, in Proc. 2004 Gallium Arsenide Applications Symp., October 2004, 83–86.Google Scholar
[6]Ishida, H. et al. : A high power Tx/Rx switch IC using AlGaN/GaN HFETs, in Int. Electron Device Meeting, December 2003, 23.6.1–23.6.4.Google Scholar
[7]Bettidi, A. et al. : High power GaN-HEMT microwave switches for X-band and wideband applications, in Proc. 2008 IEEE Radio Frequency Integrated Circuits Symp., June 2008, 329–332.Google Scholar
[8]Ciccognani, W.; De Dominicis, M.; Ferrari, M.; Limiti, E.; Peroni, M.; Romanini, P.: High-power monolithic AlGaN/GaN HEMT switch for X-band application. Electron. Lett., 44 (2008), 911–913.CrossRefGoogle Scholar
[9]Alleva, V. et al. : High power microstrip GaN-HEMT switches for microwave applications, in Proc. European Microwave Conf., October 2008, 194–197.CrossRefGoogle Scholar
[10]Ezzeddine, A.; Pengelly, R.; Badawi, H.: A high isolation DC to 18 GHz packaged MMIC SPDT switch, in Proc. 1988 European Microwave Conf., October 1988, 1028–1033.Google Scholar
[11]Bauer, R.F.; Penfield, P. Jr.: De-embedding and unterminating. IEEE Trans. Microwave Theory Tech., 22 (1974), 282–288.CrossRefGoogle Scholar