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GaN-based amplifiers for wideband applications

Published online by Cambridge University Press:  19 April 2010

Patrick Schuh ,
Hardy Sledzik ,
Rolf Reber ,
Kristina Widmer ,
Martin Oppermann ,
Markus Mußer ,
Matthias Seelmann-Eggebert  and
Rudolf Kiefer
Patrick Schuh*
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Hardy Sledzik
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Rolf Reber
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Kristina Widmer
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Martin Oppermann
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Markus Mußer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: P. Schuh Email: [email protected]
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Abstract

Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated.

Keywords

AlGaN/GaNMMICsWidebandHPALNA
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 135 - 141
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Pelk, M.; Neo, W.; Gajadharsing, J.; Pengelly, R.; de Vreede, L.: A high-effciency 100-W GaN three-way doherty amplifier for base-station applications. IEEE Trans. Microwave Theory Tech., 56 (7) (2008), 1582–1591.CrossRefGoogle Scholar
[2]Kinghorn, A.M.: Where next for airborne AESA technology?, In IEEE Radar Conf. Proc., Rome, May 2008, 287–290.Google Scholar
[3]Ender, J.H.G. et al. : Progress in phased-array radar applications, In European Radar Conf. Proc., Amsterdam, October 2004, 113–116.Google Scholar
[4]Janssen, J.; van Heijningen, M.; Provenzano, G.; Visser, G.; Morvan, E.; van Vliet, F.: X-band robust AlGaN/GaN receiver MMICs with over 41 dBm power handling, In Compound Semiconductor Integrated Circuits Symp. Proc., October 2008, 1–4.Google Scholar
[5]Fanning, D.M. et al. : 25W X-Band GaN on SI MMIC, In Compound Semiconductor Manufacturing Technology Conf. Digest, 2005.Google Scholar
[6]Schuh, P. et al. : 20W GaN HPAs for next generation X-band T/R-modules, In IEEE Microwave Theory and Techniques Symp. Digest, San Francisco, June 2006, 726–729.Google Scholar
[7]Piotrowicz, S. et al. : State of the art 58 W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in Compound Semiconductor Integrated Circuits Symp. Proc., October 2008, 1–4.CrossRefGoogle Scholar
[8]Schuh, P. et al. : X-band T/R-module front-end based on GaN MMICS. Int. J. Microwave Wirel. Technol., 1 (4) (2009), 87–394.Google Scholar
[9]Bettidi, A. et al. : X-band T/R module in state-of-the-art GaN technology, In European Radar Conf. Proc., Rome, October 2009, 258–261.Google Scholar
[10]Duperrier, C.; Campovecchio, M.; Roussel, L.; Lajugie, M.; Quere, R.: New design method of uniform and nonuniform distributed power amplifiers. IEEE Trans. Microwave Theory Tech., 49 (12), (2001), 2494–2500.CrossRefGoogle Scholar
[11]Rudolph, M. et al. : Analysis of the survivability of GaN low-noise amplifiers. IEEE Trans. Microwave Theory Tech., 55 (1), (2007), 37–43.CrossRefGoogle Scholar