Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-27T23:25:55.532Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN-based amplifiers for wideband applications

Published online by Cambridge University Press:  19 April 2010

Patrick Schuh ,
Hardy Sledzik ,
Rolf Reber ,
Kristina Widmer ,
Martin Oppermann ,
Markus Mußer ,
Matthias Seelmann-Eggebert  and
Rudolf Kiefer
Patrick Schuh*
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Hardy Sledzik
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Rolf Reber
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Kristina Widmer
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Martin Oppermann
Affiliation:
EADS Deutschland GmbH, Defence Electronics, Wörthstrasse 85, 89077 Ulm, Germany.
Markus Mußer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: P. Schuh Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated.

Keywords

AlGaN/GaNMMICsWidebandHPALNA
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 135 - 141
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Pelk, M.; Neo, W.; Gajadharsing, J.; Pengelly, R.; de Vreede, L.: A high-effciency 100-W GaN three-way doherty amplifier for base-station applications. IEEE Trans. Microwave Theory Tech., 56 (7) (2008), 1582–1591.CrossRefGoogle Scholar
[2]Kinghorn, A.M.: Where next for airborne AESA technology?, In IEEE Radar Conf. Proc., Rome, May 2008, 287–290.Google Scholar
[3]Ender, J.H.G. et al. : Progress in phased-array radar applications, In European Radar Conf. Proc., Amsterdam, October 2004, 113–116.Google Scholar
[4]Janssen, J.; van Heijningen, M.; Provenzano, G.; Visser, G.; Morvan, E.; van Vliet, F.: X-band robust AlGaN/GaN receiver MMICs with over 41 dBm power handling, In Compound Semiconductor Integrated Circuits Symp. Proc., October 2008, 1–4.Google Scholar
[5]Fanning, D.M. et al. : 25W X-Band GaN on SI MMIC, In Compound Semiconductor Manufacturing Technology Conf. Digest, 2005.Google Scholar
[6]Schuh, P. et al. : 20W GaN HPAs for next generation X-band T/R-modules, In IEEE Microwave Theory and Techniques Symp. Digest, San Francisco, June 2006, 726–729.Google Scholar
[7]Piotrowicz, S. et al. : State of the art 58 W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in Compound Semiconductor Integrated Circuits Symp. Proc., October 2008, 1–4.CrossRefGoogle Scholar
[8]Schuh, P. et al. : X-band T/R-module front-end based on GaN MMICS. Int. J. Microwave Wirel. Technol., 1 (4) (2009), 87–394.Google Scholar
[9]Bettidi, A. et al. : X-band T/R module in state-of-the-art GaN technology, In European Radar Conf. Proc., Rome, October 2009, 258–261.Google Scholar
[10]Duperrier, C.; Campovecchio, M.; Roussel, L.; Lajugie, M.; Quere, R.: New design method of uniform and nonuniform distributed power amplifiers. IEEE Trans. Microwave Theory Tech., 49 (12), (2001), 2494–2500.CrossRefGoogle Scholar
[11]Rudolph, M. et al. : Analysis of the survivability of GaN low-noise amplifiers. IEEE Trans. Microwave Theory Tech., 55 (1), (2007), 37–43.CrossRefGoogle Scholar