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GaN for space application: almost ready for flight

Published online by Cambridge University Press:  19 April 2010

Jean-Luc Muraro ,
Guillaume Nicolas ,
Do Minh Nhut ,
Stéphane Forestier ,
Stéphane Rochette ,
Olivier Vendier ,
Dominique Langrez ,
Jean-Louis Cazaux  and
Marziale Feudale
Jean-Luc Muraro*
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Guillaume Nicolas
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Do Minh Nhut
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France. Thales Alenia Space, Via Saccomuro, 24 00131 Roma, Italy.
Stéphane Forestier
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Stéphane Rochette
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Olivier Vendier
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Dominique Langrez
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Jean-Louis Cazaux
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Marziale Feudale
Affiliation:
Thales Alenia Space, Via Saccomuro, 24 00131 Roma, Italy.
*
Corresponding author: J.-L. Muraro Email: [email protected]
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Abstract

On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.

Keywords

Gallium nitridePower amplifiersReceiversPackagingReliabilitySatellite equipment
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 121 - 133
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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