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Evaluating and predicting lifetime in capacitive MEMS switches

Published online by Cambridge University Press:  21 September 2011

Charles L. Goldsmith ,
Sean O'Brien ,
David Molinero  and
James C. M. Hwang
Charles L. Goldsmith*
Affiliation:
MEMtronics Corporation, Plano, TX 75075, USA.
Sean O'Brien
Affiliation:
MEMtronics Corporation, Plano, TX 75075, USA.
David Molinero
Affiliation:
Lehigh University, Bethlehem, PA 18015, USA.
James C. M. Hwang
Affiliation:
Lehigh University, Bethlehem, PA 18015, USA.
*
Corresponding author: C.L. Goldsmith Email: [email protected]
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Abstract

An empirical model has been proposed which provides an excellent fit to the drift of pull-in and release voltages of a MEMS capacitive switch due to bulk dielectric charging. This model correctly fits the linear time dependence over short time spans and transitions to a logarithmic dependence over longer time spans. Using this model to fit measured data enables a quick and efficient determination of the rate of dielectric charging, as well as providing a worst-case prediction of when the switch will fail due to dielectric charging. This model has been used to explore the impact of applied voltage, temperature, and duty factor on switch lifetime.

Keywords

RF MEMScapacitive switchdielectric chargingreliability
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 5: RF MEMS , October 2011 , pp. 565 - 570
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

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