No CrossRef data available.
Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis
Published online by Cambridge University Press: 15 October 2013
Abstract
An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.
- Type
- Research Papers
- Information
- International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 73 - 81
- Copyright
- Copyright © Cambridge University Press and the European Microwave Association 2013