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Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band

Published online by Cambridge University Press:  16 July 2012

Jérôme Chéron ,
Michel Campovecchio ,
Denis Barataud ,
Tibault Reveyrand ,
Michel Stanislawiak ,
Philippe Eudeline  and
Didier Floriot
Jérôme Chéron*
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France. Phone: +335 554 572 96
Michel Campovecchio
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France. Phone: +335 554 572 96
Denis Barataud
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France. Phone: +335 554 572 96
Tibault Reveyrand
Affiliation:
XLIM – UMR 6172, Université de Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges, France. Phone: +335 554 572 96
Michel Stanislawiak
Affiliation:
Thales Air System, ZI du Mont Jarret, Ymare, 76520 Boos, France
Philippe Eudeline
Affiliation:
Thales Air System, ZI du Mont Jarret, Ymare, 76520 Boos, France
Didier Floriot
Affiliation:
UMS, Parc Silic de Villebon-Courtaboeuf, 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France
*
Corresponding author: J. Chéron Email: jerome.cheron@xlim
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Abstract

The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications.

Keywords

ModellingSimulation and characterizations of devices and circuitsPower Amplifiers and Linearizers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Issue 5 , October 2012 , pp. 495 - 503
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

[1]Johansson, T.; Arnborg, T.: A novel approach to 3-D modeling of packaged RF power. IEEE Trans. Microw. Theory Tech., 47 (63 PART 1) (1999), 760–768.Google Scholar
[2]Flucke, J.; Schmückle, F.J.; Heinrich, W.; Rudolph, M.: An accurate package model for 60W GaN power transistors, In Fourth European Microwave Integrated Circuits Conf., Rome, Italy, 2009, 152–155.Google Scholar
[3]Liang, T.; Plá, J.A.; Aaen, P.H.; Mahalingam, M.: Equivalent-circuit modeling and verification of metal–ceramic packages for RF and microwave power transistors. IEEE Trans. Microw. Theory Tech., 47 (6) (1999), 709–712.Google Scholar
[4]Chun, C.; Pham, A.V.; Laskar, J.; Hutchison, B.: Development of microwave package models utilizing on-wafer characterization techniques. IEEE Trans. Microw. Theory Tech., 45 (10 PART 2) (1997), 1948–1954.Google Scholar
[5]Aaen, P.H.; Plá, J.A.; Balanis, C.A.: Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors. IEEE Trans. Microw. Theory Tech., 54 (7) (2006), 3052–3058.Google Scholar
[6]Aaen, P.H.; Plá, J.A.; Balanis, C.A.: On the development of CAD techniques suitable for the design of high-power RF transistors. IEEE Trans. Microw. Theory Tech., 53 (10) (2005), 3067–3074.Google Scholar
[7]Aaen, P.H.; Plá, J.A.; Wood, J.: Modeling and Characterization of RF and Microwave Power FETs, Cambridge University Press, Cambridge, 2007.Google Scholar
[8]Rudolph, M.; Fager, C.; Root, D.E.: Nonlinear Transistor Model Parameter Extraction Techniques, Cambridge University Press, Cambridge, 2011.Google Scholar
[9]Jardel, O. et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12) (2007), 2660–2669.Google Scholar
[10]Rytting, D.K.: Network analyzer error models and calibration methods, In Proc 52nd ARFTG Conf., presented at Short Course on Computer-Aided RF and Microwave Testing and Design, Rohnert Park, CA, USA, 1998.Google Scholar
[11]Grover, F.W.: Inductance Calculations: Working Formulas and Tables, Dover Publication, New York, 1946.Google Scholar
[12]Mouthaan, K.; Tinti, R.; De Kok, M.; De Graaff, H.C.; Tauritz, J.L.; Slotboom, J.: Microwave modelling and measurement of the self- and mutual inductance of coupled bondwires, In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, MN, USA, 1997, 166–169.Google Scholar
[13]Bahl, I.J.; Trivedi, D.K.: A designer's guide to microstrip line. Microwaves, 16 (1977), 174–182.Google Scholar
[14]Chéron, J. et al. : Harmonic control in package of power GaN transistors for high efficiency and wideband performances in S-band, In 41st European Microwave Conf., Manchester, UK, 2011, 1111–1114.Google Scholar