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Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

Published online by Cambridge University Press:  07 April 2016

Agostino Benvegnù ,
Davide Bisi ,
Sylvain Laurent ,
Matteo Meneghini ,
Gaudenzio Meneghesso ,
Denis Barataud ,
Enrico Zanoni  and
Raymond Quere
Agostino Benvegnù*
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745 Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Davide Bisi
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Sylvain Laurent
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745
Matteo Meneghini
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Gaudenzio Meneghesso
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Denis Barataud
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745
Enrico Zanoni
Affiliation:
Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
Raymond Quere
Affiliation:
XLIM – CNRS–University of Limoges 123, Avenue Albert Thomas, 87060 Limoges Cedex, France. Phone: +33555457745
*
Corresponding author:A. Benvegnù Email: [email protected]
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Abstract

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21 and Y22 measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21 and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

Keywords

Deep level transient spectroscopy (DLTS)Transcondutance frequency dispersionOutput conductance frequency dispersionDefectsGallium nitrideHigh electron mobility transistor (HEMT)Trap levels
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Special Issue 4-5: EuMW 2015 Special Issue , June 2016 , pp. 663 - 672
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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References

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