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Automated extraction of device noise parameters based on multi-frequency, source-pull data

Published online by Cambridge University Press:  10 September 2013

Sergio Colangeli ,
Walter Ciccognani ,
Mirko Palomba  and
Ernesto Limiti
Sergio Colangeli*
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
Mirko Palomba
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Roma “Tor Vergata”, Via del Politecnico, 1, Roma, 00133, Italy
*
Corresponding author: S. Colangeli Email: [email protected]
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Abstract

In this paper a novel approach for determining the four noise parameters of FET devices over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most 10 constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the FET equivalent circuit's topology, or the values of its elements. This peculiarity makes the proposed method very well suited to quick characterization campaigns of active devices, avoiding the burden of a whole set of prior, different measurements and the relevant, critical extraction procedures, which are strongly dependent on the device.

Keywords

ModelingSimulation and characterizations of devices and circuitsMicrowave measurements
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 1: IJMWT Special Issue on the 2013 National Microwave Days in France , February 2014 , pp. 63 - 72
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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References

[1]Ciccognani, W.; Limiti, E.; Longhi, P.E., Renvoise, M.: LNAs for radioastronomy applications using advanced industrial 70 nm metamorphic technology. IEEE J.Solid-State Circuits, JSSC-45 (10) (2010), 2008–2015.CrossRefGoogle Scholar
[2]Pucel, R.A.; Haus, H.A.; Statz, J.: Signal and noise properties of Gallium Arsenide microwave field-effect transistors. Adv. Electron. Electron Phys., 38 (1975), 195–265.Google Scholar
[3]Gupta, M.S.; Greiling, P.T.: Microwave noise characterization of GaAs MESFET's: determination of extrinsic noise parameters. IEEE Trans. Microw. Theory Tech., 36 (4) (1988), 745–751.Google Scholar
[4]Pospieszalski, M.W.: Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence. IEEE Trans. Microw. Theory Tech., 37 (9) (1989), 1340–1350.Google Scholar
[5]Tasker, P.J.; Reinert, W.; Braunstein, J.; Schlechtweg, M.: Direct extraction of all four transistor noise parameters from a single noise figure measurement, in Proc. 22nd European Microwave Conf., 5–9 September 1992, 157–162.Google Scholar
[6]Dambrine, G.; Cappy, A.; Delos, E.: A new method for on-wafer high frequency noise measurement of FETs, in Proc. IEEE MTT-S Int. Microwave Symp. Digest, 10–14 July 1991, 169–172.Google Scholar
[7]De Dominicis, M.; Giannini, F.; Limiti, E.; Serino, A.: Direct noise characterization of microwave FET using 50 Ω noise figure and Y-parameter measurements. Microw. Opt. Technol. Lett., 44 (6) (2005), 565–569.Google Scholar
[8]Ciccognani, W. et al. : Extraction of microwave FET noise parameters using frequency- dependent equivalent noise temperatures, in Proc. Int. Microwave and Optoelectronics Conf. (IMOC), Salvador (Brasile), 29 October–1 November 2007, 856–860.Google Scholar
[9]Bentini, A.; Ciccognani, W.; Colangeli, S.; Scucchia, L.; Limiti, E.: Highly reliable characterization approaches oriented to active device noise modeling, in Proc. Int. Symp. on Microwave and Optical Technology (ISMOT 2011), Prague (Czech Republic), 20–23 June 2011.Google Scholar
[10]Lane, R.Q.: The determination of device noise parameters. Proc. IEEE, 57 (8) (1969), 1461–1462.Google Scholar
[11]Engberg, J.; Larsen, T.: Noise Theory of Linear and Nonlinear Circuits. John Wiley & Sons Ltd., Chichester, England, 1995.Google Scholar
[12]Boudiaf, A.; Laporte, M.: An accurate and repeatable technique for noise parameter measurements. IEEE Trans. Instrum. Meas., 42 (2) (1993), 532–537.Google Scholar
[13]De Dominicis, M.; Giannini, F.; Limiti, E.; Saggio, G.: A novel impedance pattern for fast noise measurements. IEEE Trans. Instrum. Meas., IM-51 (3) (2002), 560–564.Google Scholar
[14]Reveyrand, T. et al. : GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project. Int. J. Microw. Wirel. Technol., 2 (01) (2010), 51–61.Google Scholar
[15]Pantellini, A. et al. : GaN-on-silicon evaluation for high-power MMIC applications, in Proc. workshop on advanced semiconductor materials and devices for power electronics applications (HeteroSiC-WASMPE 2011), Tours (France), 27–30 June 2011.Google Scholar