Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-26T16:26:13.009Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of high efficiency, low noise sputtered magnetron's cathode using GaN and SiC semiconductors for modulated microwave power transmission

Published online by Cambridge University Press:  08 April 2021

Leong Wen Chek Open the ORCID record for Leong Wen Chek [Opens in a new window] ,
Saad Mekhilef  and
Harikrishnan Ramiah
Leong Wen Chek*
Affiliation:
Power Electronics and Renewable Energy Research Laboratory, Department of Electrical, Faculty of Engineering, University of Malaya, 50603Kuala Lumpur, Malaysia
Saad Mekhilef*
Affiliation:
Power Electronics and Renewable Energy Research Laboratory, Department of Electrical, Faculty of Engineering, University of Malaya, 50603Kuala Lumpur, Malaysia Faculty of Science, Engineering and Technology, School of Software and Electrical Engineering, Swinburne University of Technology, Victoria, VIC3122, Australia
Harikrishnan Ramiah
Affiliation:
Department of Electrical, Faculty of Engineering, University of Malaya, 50603Kuala Lumpur, Malaysia
*
Author for correspondence: Saad Mekhilef, Leong Wen Chek, E-mails: [email protected], [email protected]
Author for correspondence: Saad Mekhilef, Leong Wen Chek, E-mails: [email protected], [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

Semiconductor deposition on magnetron's cathode surface using different materials such as gallium nitride (GaN) and silicon carbide (SiC) semiconductors is conducted to grow approximately 80, 100 and 120 nm plasma layers. The cathode is then used to generate high frequency and low-power microwave for further comparison and analysis with the conventional magnetron operation. Parameter of analysis to identify the efficiency includes electron drift velocity, harmonic order, total harmonic distortion, low harmonic distortion, and spectrum observation. The sputtered cathode of the magnetron is used to generate a low-power microwave observing a generator efficiency up to 93 and 88% for GaN and SiC materials, respectively, compared to the conventional material, which observes 37% of efficiency at 2450 MHz, 5 W. Also reported is the quality of semiconductor sputtering on the magnetron cathode, which was manipulated by the deposition period, temperature, and plasma layer growth thickness.

Keywords

Electromagnetic compatibilitywireless power transfer and energy harvesting
Type
Active Circuits
Information
International Journal of Microwave and Wireless Technologies , Volume 14 , Issue 4 , May 2022 , pp. 417 - 425
Check for updates
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press in association with the European Microwave Association

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Brown, WC (1974) The technology and application of free-space power transmission by microwave beam. Proceedings of the IEEE 62, 11–25.CrossRefGoogle Scholar
Brown, WC (1977) Electronic and mechanical improvement of the receiving terminal of a free-space microwave power transmission system. NASA Sti/recon Technical Report N, 77, 31613.Google Scholar
Code, S (2015) Limits of human exposure to radiofrequency electromagnetic energy in the frequency range from 3 kHz to 300 GHz.Google Scholar
Brown, WC (1981) Status of the microwave power transmission components for the solar power satellite. IEEE Transactions on Microwave Theory and Techniques 29, 1319–1327.CrossRefGoogle Scholar
Brown, WC and Eves, EE (1992) Beamed microwave power transmission and its application to space. IEEE Transactions on Microwave Theory and Techniques 40, 1239–1250.CrossRefGoogle Scholar
Hu, L, Su, J, Qiu, R and Fang, X (2018) Ultra-wideband microwave generation using a low-energy-triggered bulk gallium arsenide avalanche semiconductor switch with ultrafast switching. IEEE Transactions on Electron Devices 65, 1308–1313.CrossRefGoogle Scholar
Zhang, W and Yao, J (2018) Silicon photonic integrated optoelectronic oscillator for frequency-tunable microwave generation. Journal of Lightwave Technology 36, 4655–4663.CrossRefGoogle Scholar
Ikeda, H and Itoh, Y (2018) 2.4-GHz-band high-power and high-efficiency solid-state injection-locked oscillator. IEEE Transactions on Microwave Theory and Techniques 66, 3315–3322.CrossRefGoogle Scholar
Konishi, T, Takaki, K and Yukimura, K (2014) Spatial distribution of a high-power impulse magnetron sputtering glow plasma by a controlled unbalanced magnetic field. IEEE Transactions on Plasma Science 42, 2786–2787.CrossRefGoogle Scholar
Canali, C, Jacoboni, C, Nava, F, Ottaviani, G and Alberigi-Quaranta, A (1975) Electron drift velocity in silicon. Physical Review B 12, 2265.CrossRefGoogle Scholar
Yoshino, K, Sowada, U and Schmidt, W (1976) Effect of molecular solutes on the electron drift velocity in liquid Ar, Kr, and Xe. Physical Review A 14, 438.CrossRefGoogle Scholar
Canali, C, Majni, G, Minder, R and Ottaviani, G (1975) Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Transactions on Electron Devices 22, 1045–1047.CrossRefGoogle Scholar
Chapin, JS (1979) Sputtering process and apparatus, ed: Google Patents.Google Scholar
Somekh, R (1984) The thermalization of energetic atoms during the sputtering process. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2, 1285–1291.CrossRefGoogle Scholar
Amankwah, R and Pickles, C (2005) Microwave calcination and sintering of manganese carbonate ore. Canadian metallurgical quarterly 44, 239–247.CrossRefGoogle Scholar
Kalinin, PV, Arzhannikov, AV, Burdakov, AV, Bobylev, VV, Ivanenko, VG, Makarov, AG, Mekler, KI, Polosatkin, SV and Rovenskikh, AF (2009) Station for resonance microwave heating. 2009 European Microwave Conference (EuMC). IEEE, pp. 1125–1127.Google Scholar
Kybartas, D, Ibenskis, E and Surna, R (2011) Single mode circular waveguide applicator for microwave heating of oblong objects in food research. Elektronika ir Elektrotechnika 114, 79–82.CrossRefGoogle Scholar
Meier, I and De Swardt, J (2000) Synthesis of heating patterns by interference of microwaves. International Journal of Electronics 87, 725–734.CrossRefGoogle Scholar
Binari, SC, Klein, P and Kazior, TE (2002) Trapping effects in GaN and SiC microwave FETs. Proceedings of the IEEE 90, 1048–1058.CrossRefGoogle Scholar
Pengelly, RS, Wood, SM, Milligan, JW, Sheppard, ST and Pribble, WL (2012) A review of GaN on SiC high electron-mobility power transistors and MMICs. IEEE Transactions on Microwave Theory and Techniques 60, 1764–1783.CrossRefGoogle Scholar
Ponce, F, Krusor, B, Major, J Jr, Plano, W and Welch, D (1995) Microstructure of GaN epitaxy on SiC using AlN buffer layers. Applied Physics Letters 67, 410–412.CrossRefGoogle Scholar
Torvik, JT, Leksono, M, Pankove, JI, Van Zeghbroeck, B, Ng, HM and Moustakas, TD (1998) Electrical characterization of GaN/SiC np heterojunction diodes. Applied Physics Letters 72, 1371–1373.CrossRefGoogle Scholar
Xu, J, Gu, L, Ye, Z, Kargarrazi, S and Rivas-Davila, JM (2019) Cascode GaN/SiC: a wide-bandgap heterogenous power device for high-frequency applications. IEEE Transactions on Power Electronics 35(6), 6340–6349.CrossRefGoogle Scholar
Christou, A (2019) Nanostructures and crystal defects in thick GaN and SiC epitaxial layers for power electronic switches. ECS Transactions 92, 99–109.CrossRefGoogle Scholar
Daimon, M and Jiang, W (2007) Modified configuration of relativistic magnetron with diffraction output for efficiency improvement. Applied Physics Letters 91, 191503.CrossRefGoogle Scholar
Darvishi, M, van der Zee, R, Klumperink, EA and Nauta, B (2012) Widely tunable 4th order switched Gm –C band-pass filter based on n-path filters. IEEE Journal of Solid-state Circuits 47, 3105–3119.CrossRefGoogle Scholar
Sharma, G and Prasad, S (2006) Optimization of process parameters for microwave drying of garlic cloves. Journal of Food Engineering 75, 441–446.CrossRefGoogle Scholar
Yongsawatdigul, J and Gunasekaran, S (1996) Microwave-vacuum drying of cranberries: part I. Energy use and efficiency. Journal of Food Processing and Preservation 20, 121–143.CrossRefGoogle Scholar
Ikeda, H and Itoh, Y (2019) A 2.4 GHz-band 250 W, 60% feedback-type GaN-HFET oscillator using imbalanced coupling resonator for use in the microwave oven. Applied Sciences 9, 2887.CrossRefGoogle Scholar
Kim, SH, Kim, HJ, Shin, SW, Kim, JD, Kim, BK and Choi, JJ Combined power oscillator using GaN HEMT, in 2011 IEEE MTT-S International Microwave Symposium, 2011: IEEE, pp. 1–4.CrossRefGoogle Scholar
Chek, LW, Mekhilef, S, Krishnamurthi, M and Sulaiman, E Multiple output LC tank varactor VCO with ultra-low power consumption and low-phase noise, in 2015 IEEE 12th Malaysia International Conference on Communications (MICC), 2015: IEEE, pp. 310–314.CrossRefGoogle Scholar
Chek, LW, Mekhilef, S and Ramiah, H High-Efficiency magnetron using GaN cathode for high frequency and Low power modulated microwave generation, in 2020 IEEE International Conference on Computing, Power and Communication Technologies (GUCON), 2020: IEEE, pp. 838–841.CrossRefGoogle Scholar
Chek, LW, Mekhilef, S, Sulaiman, E and Krishnamurthi, M (2016) Design of ramp-time current control with dynamic fuzzy bandwidth for wireless power transmission. International Journal of Microwave and Wireless Technologies 8, 1173.CrossRefGoogle Scholar
Surducan, V and Surducan, E (2013) Low-Cost Microwave Power Generator for Scientific and Medical Use [Application Notes]. IEEE Microwave Magazine 14(4), 124–130.CrossRefGoogle Scholar
Sahu, BB, Toyoda, H and Han, JG (2018) Effectiveness of plasma and radical control for the low temperature synthesis and properties of a-SiNx: H films using RF-near microwave PECVD. Physics of Plasmas 25(2), 023511.CrossRefGoogle Scholar
Lopresto, V, Pinto, R, Farina, L and Cavagnaro, M (2017) Treatment planning in microwave thermal ablation: clinical gaps and recent research advances. International Journal of Hyperthermia 33(1), 83–100.CrossRefGoogle ScholarPubMed