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Small- and large-signal modeling of InP HBTs in transferred-substrate technology

Published online by Cambridge University Press:  11 March 2014

Tom K. Johansen ,
Matthias Rudolph ,
Thomas Jensen ,
Tomas Kraemer ,
Nils Weimann ,
Frank Schnieder ,
Viktor Krozer  and
Wolfgang Heinrich
Tom K. Johansen*
Affiliation:
Department of Electrical Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
Matthias Rudolph
Affiliation:
Brandenburg University of Technology, D-03046 Cottbus, Germany Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Thomas Jensen
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Tomas Kraemer
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Nils Weimann
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Frank Schnieder
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Viktor Krozer
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
Wolfgang Heinrich
Affiliation:
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin, Germany
*
Corresponding author: T. K. Johansen; Email: [email protected]
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Abstract

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

Keywords

ModelingSimulation and characterization of devices and circuitsLinear and non-linear CAD Techniques
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 3-4: European Microwave Week 2013 , June 2014 , pp. 243 - 251
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

REFERENCES

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