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Opto-microwave experimental mapping of SiGe/Si phototransistors at 850 nm

Published online by Cambridge University Press:  07 January 2010

Marc D. Rosales ,
François Duport ,
Julien Schiellein ,
Jean-Luc Polleux ,
Catherine Algani  and
Christian Rumelhard
Marc D. Rosales
Affiliation:
Université Paris Est – ESYCOM – ESIEE Paris, Cité Descartes, BP 99, 93162 Noisy-le-Grand, France.
François Duport
Affiliation:
Université Paris Est – ESYCOM – ESIEE Paris, Cité Descartes, BP 99, 93162 Noisy-le-Grand, France.
Julien Schiellein
Affiliation:
Université Paris Est – ESYCOM – ESIEE Paris, Cité Descartes, BP 99, 93162 Noisy-le-Grand, France.
Jean-Luc Polleux*
Affiliation:
Université Paris Est – ESYCOM – ESIEE Paris, Cité Descartes, BP 99, 93162 Noisy-le-Grand, France.
Catherine Algani
Affiliation:
CNAM – ESYCOM, 292 rue Saint Martin, Paris, France.
Christian Rumelhard
Affiliation:
CNAM – ESYCOM, 292 rue Saint Martin, Paris, France.
*
Corresponding author: J.L. Polleux Email: [email protected]
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Abstract

This paper presents measurement results providing the mapping of the opto-microwave transfer function performed on an SiGe microwave heterojunction phototransistor (HPT). This measurements will be used to extract a guideline for designing phototransistors. A mapping of the HPT's gain in low frequency helps to estimate the shape of the optical beam used for the measurement. The study also focuses on the cutoff frequency mapping of the device in phototransistor mode. Finally, these results are used to determine the general optimization rules in the SiGe HPTs design.

Keywords

Si-based detectorsSiGeHeterojunction bipolar phototransistorsHPTOpto-microwave gain mapping
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 6: 2009 National Microwave Days in France , December 2009 , pp. 469 - 473
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

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