Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-03T01:27:25.719Z Has data issue: false hasContentIssue false
  • English
  • Français

On-wafer noise parameters measurement using an extended six-port network and conventional noise figure analyzer

Published online by Cambridge University Press:  09 September 2016

Abdul-Rahman Ahmed ,
Dong-Hyun Lee  and
Kyung-Whan Yeom
Abdul-Rahman Ahmed*
Affiliation:
Department of Electrical/Electronic Engineering, Kwame Nkrumah University of Science and Technology, PMB UPO Kumasi, Ghana. Phone: +233 508 351 438
Dong-Hyun Lee
Affiliation:
Department of Radio Science and Engineering, Chungnam National University, Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
Kyung-Whan Yeom
Affiliation:
Department of Radio Science and Engineering, Chungnam National University, Gung-dong, Yuseong-gu, Daejeon 305-764, Republic of Korea
*
Corresponding author: A.- R. Ahmed Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

In this paper, we demonstrate the successful implementation of an onwafer noise parameters test set that employs an extended six-port network and a conventional noise figure analyzer. The necessary formulation that enables the calibration of the noise parameter test set as well as extraction of the noise wave correlation matrix of a two-port device under test (DUT) was tested for coaxial connector-type DUT measurement in an earlier work but not for onwafer-type DUT. Furthermore, we demonstrate the performance of this technique against data obtained from the well-known tuner method. Measurement carried out for very low-noise figure (2 dB) onwafer-type amplifier demonstrates the capability of our technique. The measured noise parameters show fluctuations in minimum noise figure, NFmin of ±0.1 dB, and in noise resistance Rn of about 2%. This test set is simple and fast leading to tremendous time- and cost-savings as well as a simplified procedure in onwafer noise parameters measurements.

Keywords

Microwave measurementsModelingSimulation and characterizations of devices and circuits
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 9 , Issue 4 , May 2017 , pp. 821 - 829
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Friis, H.T.: Noise figure of radio receivers. Proc. IRE, 32 (1944), 419–422.Google Scholar
[2] Haus, H.A.; Adler, R.B.: Circuit Theory of Linear Noisy Networks, Wiley, New York, 1959, 997–1004.Google Scholar
[3] Haus, H.A. et al. : IRE standards on methods of measuring noise in linear two ports, 1959. Proc. IRE, 48 (1) (1960), 60–68.Google Scholar
[4] Nyquist, H.: Thermal agitation of electric charge in conductors. Phys. Rev., 32 (1928), 110–113.Google Scholar
[5] Johnson, J.B.: Thermal agitation of electricity in conductors. Phys. Rev., 32 (1928), 97–109.Google Scholar
[6] Escotte, L.; Plana, R.; Graffeuil, J.: Evaluation of noise parameter extraction methods. IEEE Trans. Microw. Theory Tech., 41 (3) (1993), 382–387.Google Scholar
[7]High-accuracy noise figure measurements using the PNA-X series network analyzer, Agilent Application Note 1408-20, September 2010.Google Scholar
[8] Wiatr, W. et al. : Source-pull characterization of FinFET noise, in Proc. 17th International Conference on Mixed Design of Integrated Circuits and Systems, Wrocław, 24–26 June 2010.Google Scholar
[9] Nguyen, H.V.; Misljenovic, N.; Hosein, B.: Efficient noise extraction algorithm and wideband noise measurement system from 0.3 GHz to 67 GHz, in Proc. 82nd ARFTG Microwave Measurement Conf., Columbus, 18–21 November 2013.Google Scholar
[10] Danneville, F. et al. : RF and broadband noise investigation in High-k/Metal Gate 28-nmCMOS bulk transistor. Int. J. Numer. Model., 27 (2014), 736–747.Google Scholar
[11] Nalli, A. et al. : GaN HEMT noise model based on electromagnetic simulations. IEEE Trans. Microw. Theory Tech., 63 (8) (2015), 2498–2508.Google Scholar
[12] Meys, R.: A wave approach to the noise properties of linear microwave devices. IEEE Trans. Microw. Theory Tech., 26 (1) (1978), 34–37.Google Scholar
[13] Penfield, P.: Wave representation of amplifier noise. IRE Trans. Circuit Theory, 9 (1962), 84–86.Google Scholar
[14] Kanaglekar, N.G.; McIntosh, R.E.; Bryant, W.E.: Wave analysis of noise in interconnected multiport networks. IEEE Trans. Microw. Theory Tech., 35 (2) (1987), 112–116.CrossRefGoogle Scholar
[15] Wedge, S.W.; Rutledge, D.B.: Wave techniques for noise modeling and measurement. IEEE Trans. Microw. Theory Tech., 40 (11) (1992), 2004–2012.CrossRefGoogle Scholar
[16] Wedge, S.W.: Computer-aided design of low noise microwave circuits, Ph.D. dissertation, California Institute of Technology, 1991.Google Scholar
[17] Rutledge, D.B.; Wedge, S.W.: Microwave six-port noise parameter analyzer: US patent, US 5170126 A, 1992.Google Scholar
[18] Lázaro, A.; Maya, M.C.; Pradell, L.: Measurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources. Microw. J., 45 (3) (2002), 20–46.Google Scholar
[19] Dambrine, G.; Cappy, H.; Danneville, F.; Cappy, A.: A new method for on wafer noise measurement. IEEE Trans. Microw. Theory Tech., 41 (3) (1993), 375–381.Google Scholar
[20] Giannini, F.; Bourdel, E.: A new method to extract noise parameters based on a frequency- and time-domain analysis of noise power measurements. IEEE Trans. Microw. Theory Tech., 57 (2) (2008), 261–267.Google Scholar
[21] Werling, T.; Bourdel, E.; Pasquet, D.; Boudiaf, A.: Determination of wave noise sources using spectral parametric modeling. IEEE Trans. Microw. Theory Tech., 45 (12) (1997), 2461–2467.Google Scholar
[22] Đorđević, V. et al. : Wave approach for noise modeling of gallium nitride high electron-mobility transistors. Int. J. Numer. Model.: Electron. Netw., Devices Fields. doi: 10.1002/jnm.2138.Google Scholar
[23] Ahmed, A.-R.; Yeom, K.W.: An extraction of two-port noise parameters from measured noise powers using an extended six-port network. IEEE Trans. Microw. Theory Tech., 62 (10) (2014), 2423–2434.Google Scholar
[24] Engen, G.F.: An improved circuit for implementing the six-port technique of microwave measurements. IEEE Trans. Microw. Theory Tech., 25 (12) (1977), 1080–1083.Google Scholar
[25] Hillbrand, H.; Russer, P.H.: An efficient method for computer aided noise analysis of linear amplifier networks. IEEE Trans. Circuits Syst., 23 (4) (1976).Google Scholar
[26] Bosma, H.: On the theory of linear noisy systems. Philips Res. Rep. Suppl., 28 (10) (1967), pp. 305.Google Scholar
[27]Datasheet of MGA-82563 GaAs MMIC amplifier, Avago Technologies, available: www.avagotech.com/docs/AV02-1985EN [Accessed 13.05.2016].Google Scholar