On-chip spiral inductor in flip-chip technology
Published online by Cambridge University Press: 28 January 2010
Abstract
Performance comparison is made between on-chip spiral inductor in flip-chip versus wirebond package technology. Full-wave electromagnetic simulation and on-strip measurement techniques were used to study the performance fluctuations of inductor within flip-chip environment. Results show that the performance of a flipped silicon-based spiral inductor is affected by the radio frequency (RF) current return path differences. The RF current return path for flip-chip is concentrated on the surface of silicon layer exclusively because back side ground under silicon is floating in flip-chip technology. In addition, the bump proximity effect is also considered. On-chip inductors in flip-chip environment must be optimized by reducing the eddy current in the silicon substrate and parasitic affects by adjusting design parameters. The equivalent circuit model of the flipped on-chip spiral inductor is verified with measured results over broadband frequencies. Also, the RF flip-chip characterization technique using on-strip measurement method is presented.
Keywords
- Type
- Original Article
- Information
- International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 5 , October 2009 , pp. 431 - 440
- Copyright
- Copyright © Cambridge University Press and the European Microwave Association 2010
References
REFERENCES
- 3
- Cited by