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Next generation integrated SiGe mm-wave circuits for automotive radar sensors

Published online by Cambridge University Press:  04 January 2013

Nils Pohl ,
Herbert Knapp ,
Christian Bredendiek  and
Rudolf Lachner
Nils Pohl*
Affiliation:
Institute for Integrated Systems, Ruhr-University Bochum, D-44780, Bochum, Germany
Herbert Knapp
Affiliation:
Infineon Technologies AG, D-85579 Neubiberg, Germany.
Christian Bredendiek
Affiliation:
Institute for Integrated Systems, Ruhr-University Bochum, D-44780, Bochum, Germany
Rudolf Lachner
Affiliation:
Infineon Technologies AG, D-85579 Neubiberg, Germany.
*
Corresponding author: N. Pohl Email: [email protected]
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Abstract

In this paper, radar transmitter circuits for next generation automotive radar sensors are presented. A 79 GHz radar transmitter with an output power of 14.5 dBm consuming only 165 mA (including frequency dividers) from a 3.3 V supply voltage clearly shows the advantage of using an improved SiGe technology with an fmax of 380 GHz. In addition, two radar transmitters for higher frequencies (around 150 GHz) based on frequency doubler circuits are showing the potential of SiGe technologies. The first transmitter achieves an output power of 3 dBm (single ended) at 144 GHz, whereas the second transmitters delivers a differential output power of 0 dBm at 150 GHz. Both transmitters achieve an ultra-wide tuning range of about 45 GHz.

Keywords

Circuit Design and ApplicationsRadar Architecture and Systems
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 1: Special Issue on the German RoCC Project , February 2013 , pp. 43 - 48
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

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References

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