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New pulsed measurement setup for GaN and GaAs FETs characterization

Published online by Cambridge University Press:  19 April 2012

Alberto Santarelli ,
Rafael Cignani ,
Daniel Niessen ,
Pier Andrea Traverso  and
Fabio Filicori
Alberto Santarelli*
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Rafael Cignani
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Daniel Niessen
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Pier Andrea Traverso
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
Fabio Filicori
Affiliation:
DEIS, University of Bologna, Viale Risorgimento 2, Bologna, 40136, Italy. Phone: +39 051 209 3039
*
Corresponding author: A. Santarelli Email: [email protected]
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Abstract

A new setup is proposed for the measurement of current–voltage pulsed characteristics of electron devices. The main advantages of the system consist in: shorter pulse widths through generation in a 50-Ω environment, simple average current monitoring through separation of the direct and alternate current paths, setting of average voltage values independently of pulse amplitudes and duty cycle, and stability of the setup guaranteed by wide-band dissipative terminations. The system is used for the characterization of dispersive effects due to carrier energy traps and thermal phenomena in GaAs and GaN on SiC field effect transistors. The basic differences between the two technologies are highlighted in the paper.

Keywords

Simulation and characterizations of devices and circuitsModelingMicrowave measurements
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 3: European Microwave Week 2011 , June 2012 , pp. 387 - 397
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

REFERENCES

[1]Parker, A.E.; Rathmell, J.G.: Measurement and characterization of HEMT dynamics. IEEE Trans. Microw. Theory Tech., 49 (11) (2001), 2105–2111.CrossRefGoogle Scholar
[2]Angelov, I.; Zirath, H.; Rorsman, N.: A new empirical nonlinear model for HEMT and MESFET devices, IEEE Trans. Microw. Theory Tech., 40 (12) (1992), 2258–2266.CrossRefGoogle Scholar
[3]Yuk, K.; Branner, G.R.; McQuate, D.: An improved empirical large-signal model for high-power GaN HEMTs including self-heating and charge-trapping effects, in IEEE MTT-S Int. Microwave Symp. Digest, June 2009, 753–756.Google Scholar
[4]Jarndal, A.; Kompa, G.: Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping- and self-heating-induced dispersion and intermodulation distortion. IEEE Trans. Electron Devices, 54 (11) (2007), 2830–2836.CrossRefGoogle Scholar
[5]Agilent ADS Circuit Components Manual, http://www.agilent.com/find/eesof-knowledgecenter.Google Scholar
[6]Auriga – Pulsed IV/RF System, http://www.aurigamicrowave.com.Google Scholar
[7]Focus Microwave – Modular Pulsed IV System, http://www.focus-microwaves.com.Google Scholar
[8]Amcad – PIV/PLP Family of Pulsed IV Systems, http://www.amcad-engineering.fr.Google Scholar
[9]Hulbert, P.: Dual Channel Pulse Testing Simplifies RF Transistor Characterization, Application Notes, Keithley Instruments, Inc, http://www.keithley.com/data?asset=52041.Google Scholar
[10]Golio, J.M.: The RF and Microwave Handbook, CRC-Press, Taylor & Francis Group, ISBN 9780849372179.CrossRefGoogle Scholar
[11]Gaquiere, C.; Lafont, J.P.; Crosnier, Y.: Pulsed bias/pulsed RF characterization measurements system of FET at constant intrinsic voltage. Microw. Opt. Technol. Lett., 20 (5) (1999), 349–352.3.0.CO;2-U>CrossRefGoogle Scholar
[12]Scott, J.; Rathmell, J.G.; Parker, A.; Sayed, M.: Pulsed device measurements and applications. IEEE Trans. Microw. Theory Tech., 44 (12) (1996), 2718–2723.CrossRefGoogle Scholar
[13]Teyssier, J.P.; Bouysse, P.; Ouarch, Z.; Barataud, D.; Peyretaillad, T.; Quere, R.: 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization. IEEE Trans. Microw. Theory Tech., 46 (12) (1998), 2043–2052.CrossRefGoogle Scholar
[14]Collantes, J.M.; Ouarch, Z.; Chi, C.-Y.; Sayed, M.; Quere, R.: Discrepancies obtained in transconductance extracted from pulsed I–V curves and from pulsed S-parameters in HEMTs and PHEMTs. Electron. Lett., 34 (3) (1998), 291–292.CrossRefGoogle Scholar
[15]Santarelli, A.; Cignani, R.; Di Giacomo, V.; D'Angelo, S.; Niessen, D.; Filicori, F.: Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects, in 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), April 2010, 115–118.CrossRefGoogle Scholar
[16]Jardel, O. et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microw. Theory Tech., 55 (12) (2007), 2660–2669.CrossRefGoogle Scholar
[17]Santarelli, A.; Di Giacomo, V.: Empirical modeling of GaN FETs for nonlinear microwave circuit applications, in 2010 IEEE MTT-S Int. Microwave Symp. Digest, May 2010, 1198–1201.CrossRefGoogle Scholar
[18]Raffo, A.; Di Falco, S.; Vadala, V.; Vannini, G.: Characterization of GaN HEMT low-frequency dispersion through a multiharmonic measurement system. IEEE Trans. Microw. Theory Tech., 58 (9) (2010), 2490–2496.CrossRefGoogle Scholar
[19]Santarelli, A.; Cignani, R.; Niessen, D.; D'Angelo, S.; Traverso, P. A.; Filicori, F.: Characterization of GaN and GaAs FETs through a new pulsed measurement system, in 2011 European Microwave Integrated Circuits Conf. (EuMIC), October 2011, 1–4.CrossRefGoogle Scholar
[20]Teppati, V.; Ferrero, A.; Pisani, U.: Recent advances in real-time load-pull systems. IEEE Trans. Instrum. Meas., 57 (11) (2008), 2640–2646.CrossRefGoogle Scholar
[21]Vandenplas, S.; Verspecht, J.; Verbeyst, F.; Vandamme, E.; Bossche, M.V.: Calibration issues for the large signal network analyzer (LSNA), in 60th ARFTG Conf. Digest (Fall), December 2002, 99–106.Google Scholar
[22]Santarelli, A. et al. : Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach. Wiley Int. J. RF Microw. Comput. Aid. Eng., 18 (6) (2008), 507–516.CrossRefGoogle Scholar
[23]Matlab User Guide, www.mathworks.it.Google Scholar
[24]Dambrine, G.; Cappy, A.; Heliodore, F.; Playez, E.: A new method for determining the FET small-signal equivalent circuit. IEEE Trans. Microw. Theory Tech., 36 (7) (1988), 1151–1159.CrossRefGoogle Scholar