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A multi-harmonic model taking into account coupling effects of long- and short-term memory in SSPAs

Published online by Cambridge University Press:  18 February 2013

Christophe Maziere*
Affiliation:
AMCAD Engineering, 1 Avenue d'Ester, 87069 Limoges, France
Emmanuel Gatard
Affiliation:
AMCAD Engineering, 1 Avenue d'Ester, 87069 Limoges, France
Cedric Enguehard
Affiliation:
AMCAD Engineering, 1 Avenue d'Ester, 87069 Limoges, France
Bjorn Gustavsen
Affiliation:
SINTEF Energy Research, N-7465 Trondheim, Norway
*
Corresponding author: C. Mazière Email: [email protected]

Abstract

This paper presents a new macro modeling methodology for solid-state power amplifiers (SSPAs) and packaged transistors used in communication systems. The model topology is based on the principle of harmonic superposition recently introduced by Agilent Technologies' X-parametersTM combined with dynamic Volterra theory. The resulting multi-harmonic bilateral model takes into account the coupling effects of both short- and long-term memory in SSPAs. In this work, the behavioral model was developed from time-domain load pull and used to simulate the amplifier's response to a 16-QAM signal with specific regards to ACPR and IM3.

Type
Industrial and Engineering Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

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References

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