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MMIC-based asymmetric Doherty power amplifier for small cells applications

Published online by Cambridge University Press:  03 June 2014

Xavier Moronval ,
Reza Abdoelgafoer  and
Adeline Déchansiaud
Xavier Moronval*
Affiliation:
NXP Semiconductors, 5 bd Jean-Auguste Ingres, 31770 Colomiers, France
Reza Abdoelgafoer
Affiliation:
NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands
Adeline Déchansiaud
Affiliation:
NXP Semiconductors, 5 bd Jean-Auguste Ingres, 31770 Colomiers, France
*
Corresponding author: X. Moronval Email: [email protected]
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Abstract

We present the results obtained on a multi-mode multi-band 20 W Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The proposed two-stage circuit is based on the silicon Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. Thanks to dedicated design techniques, it can cover the Digital Cellular Service (DCS), Personal Communications Service (PCS), and UMTS bands (ranging from 1.805 to 2.17 GHz) and deliver more than 20 W of output power, 30 dB of gain and 50% of power added efficiency. When combined in a Doherty configuration with an incremental 40 W MMIC in a dual-path package, the resulted asymmetric MMIC (an industry first) can deliver an unprecedented LDMOS MMIC efficiency of up to 44% at 8 dB back-off in the UMTS band. Then, the DPA has been optimized in conjunction with a novel RF pre-distortion technique, leading to 33–80% energy saving at the system level.

Keywords

Circuit Design and ApplicationsPower Amplifiers and Linearizers
Type
Industrial and Engineering Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 7 , Issue 5 , October 2015 , pp. 499 - 505
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

REFERENCES

[1]Simic, I.S.: Evolution of Mobile Base Station Architecture, Microwave Review, June 2007.Google Scholar
[2]Colantonio, P.; Giannini, F.; Giofre, R.; Piazzon, L.: A design technique for concurrent dual-band harmonic tuned power amplifier. IEEE Trans. Microwave Theory Tech., 56 (11) (2008), 2545–2555.Google Scholar
[3]Bespalko, D.T.; Boumaiza, S.: Concurrent dual-band GaN power amplifier with compact microstrip matching network. Microw. Opt. Tech. Lett., 51 (6) (2009), 1604–1607.Google Scholar
[4]Kim, J.; Mkadem, F.; Boumaiza, S.: A high efficiency and multi-band/multi-mode power amplifier using a distributed second harmonic termination, in EuMC, Paris, France, 2010.Google Scholar
[5]NXP introduces Gen8 LDMOS Technology for Bandwidth Intensive Base Stations announced at 2011 Int. Microwave Symp., June 2011.Google Scholar
[6]Pozzar, D.M.: Microwave Engineering. Addison-Wesley, Reading, MA, 1990.Google Scholar
[7]Campbell, C.F.; Balistreri, A.; Khao, M-Y.; Dumka, D.C.; Hitt, J.: GaN takes the lead. IEEE Microw. Mag., 13 (6) (2012), 44–53.CrossRefGoogle Scholar
[8]Bouisse, G.: Video Bandwidth Theory and Practical Implementation for High Power Amplifier, MicroApps, IMS 2012.Google Scholar
[9]Doherty, W.H.: A new high efficiency power amplifier for modulated waves. Proc. IRE, 24 (1936) 1163–1182.Google Scholar
[10]Colantonio, P.; Giannini, F.; Giofrè, R.; Piazzon, L.: The AB-C Doherty power amplifier Part I: theory. Int. J. RFMICAE, 19 (3) (2009), 293–306.Google Scholar
[11]Roger, F.: A 200 mW 100 MHz-to-4 GHz 11th-order complex analog memory polynomial predistorter for wireless infrastructure RF amplifiers. in Solid-State Circuits Conf. Digest of Technical Papers (ISSCC), 2013, IEEE International.CrossRefGoogle Scholar