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Microwave MEMS devices designed for process robustness and operational reliability

Published online by Cambridge University Press:  18 October 2011

Mikael Sterner*
Affiliation:
Microsystem Technology Lab, KTH – Royal Institute of Technology, Osquldas väg 10, SE-100 44 Stockholm, Sweden.
Nutapong Somjit
Affiliation:
Microsystem Technology Lab, KTH – Royal Institute of Technology, Osquldas väg 10, SE-100 44 Stockholm, Sweden.
Umer Shah
Affiliation:
Microsystem Technology Lab, KTH – Royal Institute of Technology, Osquldas väg 10, SE-100 44 Stockholm, Sweden.
Sergey Dudorov
Affiliation:
Microsystem Technology Lab, KTH – Royal Institute of Technology, Osquldas väg 10, SE-100 44 Stockholm, Sweden.
Dmitry Chicherin
Affiliation:
Department of Radio Science and Engineering, SMARAD Centre of Excellence, Aalto University, PO Box 13000, FI-00076 Aalto, Finland.
Antti Räisänen
Affiliation:
Department of Radio Science and Engineering, SMARAD Centre of Excellence, Aalto University, PO Box 13000, FI-00076 Aalto, Finland.
Joachim Oberhammer
Affiliation:
Microsystem Technology Lab, KTH – Royal Institute of Technology, Osquldas väg 10, SE-100 44 Stockholm, Sweden.
*
Corresponding author: M. Sterner Email: [email protected]

Abstract

This paper presents an overview on novel microwave micro-electromechanical systems (MEMS) device concepts developed in our research group during the last 5 years, which are specifically designed for addressing some fundamental problems for reliable device operation and robustness to process parameter variation. In contrast to conventional solutions, the presented device concepts are targeted at eliminating their respective failure modes rather than reducing or controlling them. Novel concepts of MEMS phase shifters, tunable microwave surfaces, reconfigurable leaky-wave antennas, multi-stable switches, and tunable capacitors are presented, featuring the following innovative design elements: dielectric-less actuators to overcome dielectric charging; reversing active/passive functions in MEMS switch actuators to improve recovery from contact stiction; symmetrical anti-parallel metallization for full stress-control and temperature compensation of composite dielectric/metal layers for free-standing structures; monocrystalline silicon as structural material for superior mechanical performance; and eliminating thin metallic bridges for high–power handling. This paper summarizes the design, fabrication, and measurement of devices featuring these concepts, enhanced by new characterization data, and discusses them in the context of the conventional MEMS device design.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

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