Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T04:36:14.275Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-power CMOS LNA based on dual resistive-feedback structure with peaking inductor for wideband application

Published online by Cambridge University Press:  23 January 2013

Meng-Ting Hsu ,
Shih-Yu Hsu  and
Yu-Hwa Lin
Meng-Ting Hsu*
Affiliation:
National Yunlin University of Science and Technology Press, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, Republic of China. Phone: +886 5 534 2601 4322
Shih-Yu Hsu
Affiliation:
National Yunlin University of Science and Technology Press, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, Republic of China. Phone: +886 5 534 2601 4322
Yu-Hwa Lin
Affiliation:
National Yunlin University of Science and Technology Press, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan, Republic of China. Phone: +886 5 534 2601 4322
*
Corresponding author: M.-T. Hsu Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

This paper presents a low-power and low-noise amplifier (LNA) with resistive-feedback configuration. The design consists of two resistive-feedback amplifiers. In order to reduce the chip area, a resistive-feedback inverter is adopted for input matching. The output stage adopts basic topology of an RC feedback for output matching, and adds two inductors for inductive peaking at the high band. The implemented LNA has a peak gain of 10.5 dB, the input reflection coefficient S11 is lower than −8 dB and the output reflection S22 is lower than −10.8 dB, and noise figure of 4.2–5.2 dB is between 1 and 10 GHz while consuming 12.65 mW from a 1.5 V supply. The chip area is only 0.69 mm2 and the figure of merit is 6.64 including the area estimation. The circuit was fabricated in a TSMC 0.18 um CMOS process.

Keywords

Low-noise amplifier (LNA)Low powerResistive feedbackInverter
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 5 , Special Issue 1: Special Issue on the German RoCC Project , February 2013 , pp. 65 - 70
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Ismail, A.; Abidi, A.: A 3 to 10 GHz LNA using a wideband LC-ladder matching network, in Proc. 2004 IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers. (ISSCC 2004), 2004, Vol. 1, pp. 384–534.Google Scholar
[2]Bevilacqua, A.; Niknejad, A.M.: An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receivers, in Proc. 2004 IEEE Int. Conf. Solid-State Circuits, Digest of Technical Papers( ISSCC 2004), 2004, Vol. 1, pp. 382–533.Google Scholar
[3]Ellinger, F.; Barras, D.; Schmatz, M.; Jackel, H.: A low-power DC-7.8 GHz BiCMOS LNA for UWB and optical communication, in IEEE MTT-S Int. Digest, June 2004, pp. 13–16.Google Scholar
[4]Shiramizu, N.; Masuda, T.; Tanabe, M.; Washio, K.: A 3–10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-um_ SiGe BiCMOS technology, in IEEE RFIC Symp. Digest, Long Beach, CA, June 2005, pp. 39–42.Google Scholar
[5]Lee, J.; Cressler, J.D.: A 3–10 GHz SiGe resistive feedback low noise amplifier for UWB applications, in IEEE RFIC Symp. Digest, Long Beach, CA, June 2005, pp. 545–548.Google Scholar
[6]Park, Y.; Lee, C.-H.; Cressler, J.D.; Laskar, J.; Joseph, A.: A very low power SiGe LNA for UWB application, in IEEE MTT-S Int. Digest, June 2005, pp. 1041–1044.Google Scholar
[7]Zhang, F.; Kinget, P.: Low power programmable-gain CMOS distributed LNA for ultra-wideband applications, in IEEE Symp. VLSI Circuits, Digest of Technical Papers., 2005, pp. 78–81.Google Scholar
[8]Bevilacqua, A.; Sandner, C.; Gerosa, A.; Neviani, A.: A fully integrated differential CMOS LNA for 3-5-GHz ultrawideband wireless receivers. IEEE Microw. Wirel. Compon. Lett., 16 (3) (2006), 134–136.Google Scholar
[9]Chao, S.-F.; Kuo, J.-J.; Lin, C.-L.; Tsai, M.-D.; Wang, H.: A DC-11.5 GHz low-power, wideband amplifier using splitting-load inductive peaking technique. IEEE Microw. Wirel. Compon. Lett., 18 (7) (2008), 482–484.Google Scholar
[10]Chen, Y.J.E.; Huang, Y.I.: Development of integrated broad-band CMOS low-noise amplifiers. IEEE Trans. Circuits Syst. I: Regular Papers, 54 (2007), 2120–2127.Google Scholar
[11]Hsu, M.-T.; Hsu, S.-Y.: A low power CMOS LNA for 1–10 GHz application, in Proc. 2009 Asia-Pacific Microwave Conf. (APMC 2009), 2009 pp. 1132–1135.Google Scholar
[12]Gramegna, G.; Erratico, G.: A Sub-1-dB NF ±2.3-kV ESD-Protected 900-MHz CMOS LNA. IEEE J. Solid-State Circuit 36 (7) (2001).Google Scholar
[13]Fang, C.; Law, C.L.; Wang, J.H.: A 3.1–10.6 GHz ultra-wideband low noise amplifier with 13-dB gain, 3.4-dB noise figure, and consumes only 12.9 mW of DC power. IEEE Microw. Wirel. Compon. Lett., 17 (2007), 295–297.Google Scholar
[14]Park, B.; Choi, S.; Hong, S.: A low-noise amplifier with tunable interference rejection for 3.1- to 10.6-GHz UWB systems. IEEE Microw. Wirel. Compon. Lett., 20 (2010), 40–42.Google Scholar
[15]Fu, C.-T.; Kuo, C.-N.; Taylor, S.S.: Low-noise amplifier design with dual reactive feedback for broadband simultaneous noise and impedance matching. IEEE Trans. Microw. Theory Tech., 58 (2010), 795–806.Google Scholar
[16]Lin, Y.S. et al. : Analysis and design of a CMOS UWB LNA with dual RLC branch wideband input matching network. IEEE Trans. Microw. Theory Tech., 58 (2) (2010), 287–296.Google Scholar
[17]Park, Y.; Lee, C.-H.; Cressler, J.D.; Laskar, J.: The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation. IEEE Trans. Microw. Theory Tech., 54 (4) (2006), 1687–1697.Google Scholar