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ISM 2.45 GHz band high-efficient 15 W GaN HEMT power amplifier: design validation

Published online by Cambridge University Press:  28 May 2019

Marcin Góralczyk Open the ORCID record for Marcin Góralczyk [Opens in a new window]  and
Wojciech Wojtasiak Open the ORCID record for Wojciech Wojtasiak [Opens in a new window]
Marcin Góralczyk
Affiliation:
Warsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, Poland
Wojciech Wojtasiak*
Affiliation:
Warsaw University of Technology, Institute of Radioelectronics and Multimedia Technology, Warsaw, Poland
*
Author for correspondence: Wojciech Wojtasiak, E-mail: [email protected]
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Abstract

This paper describes the development of a power amplifier operating over a 2.4–2.5 GHz frequency range with the output power level more than 15 W and 60% PAE. The transistor applied was the 10 W (13 W Psat) power GaN HEMT (CGH40010F from Wolfspeed) recommended up to 6 GHz. A harmonic tuning method was used to achieve even 30% more output power than the CGH40010 transistor was specified to deliver while maintaining high gain and high efficiency. Furthermore, an accuracy analysis of amplifier design was also conducted. It included validation and correction of the available transistor models as well as validation of the models of microstrip circuits implemented in ADS. Finally, it was concluded that both the mentioned sources of errors contributed at a similar level.

Keywords

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Type
MIKON 2018
Information
International Journal of Microwave and Wireless Technologies , Volume 11 , Special Issue 7: MIKON 2018 / EuMW 2018 (Part II) , September 2019 , pp. 546 - 553
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2019 

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