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A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

Published online by Cambridge University Press:  14 March 2012

Dirk Schwantuschke ,
Christian Haupt ,
Rudolf Kiefer ,
Peter Brückner ,
Matthias Seelmann-Eggebert ,
Axel Tessmann ,
Michael Mikulla ,
Ingmar Kallfass  and
Rüdiger Quay
Dirk Schwantuschke*
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Christian Haupt
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Rudolf Kiefer
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Peter Brückner
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Matthias Seelmann-Eggebert
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Axel Tessmann
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Michael Mikulla
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
Ingmar Kallfass
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449 Karlsruhe Institute of Technology, Institut für Hochfrequenztechnik und Elektronik, D-76131 Karlsruhe, Germany
Rüdiger Quay
Affiliation:
Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Phone: +49 761 5159 449
*
Corresponding author: D. Schwantuschke Email: [email protected]
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Abstract

In this paper we present the design and realization of a high-power amplifier in grounded coplanar transmission line technology using AlGaN/GaN dual-gate High electron mobility transistors (HEMTs) with a gate-length of 100 nm to achieve a high gain per stage and high output power. A large-signal model was extracted for the dual-gate HEMT based on the state-space approach. For the fabricated dual-stage amplifier a continuous-wave saturatedoutput power of up to 24.8 dBm (0.84 W/mm) was measured at 63 GHz for 20 V drain bias. A small-signal gain of more than 20 dB was achieved between 56 and 65 GHz.

Keywords

100 nm AlGaN/GaNdual-gate HEMTmillimeter-wave GaN HEMTpower amplifiermillimeter-wave amplificationV-bandMMIC
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 3: European Microwave Week 2011 , June 2012 , pp. 267 - 274
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

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