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GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project

Published online by Cambridge University Press:  11 March 2010

Tibault Reveyrand ,
Walter Ciccognani ,
Giovanni Ghione ,
Olivier Jardel ,
Ernesto Limiti ,
Antonio Serino ,
Vittorio Camarchia ,
Federica Cappelluti  and
Raymond Quéré
Tibault Reveyrand*
Affiliation:
XLIM-C2S2, 123 Avenue Albert Thomas, Cedex Limoges 87060, France. Phone: +33 672 190 725; Fax: +33 555 45 76 66.
Walter Ciccognani
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, Rome 00133, Italy.
Giovanni Ghione
Affiliation:
Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
Olivier Jardel
Affiliation:
Alcatel – Thales III-V Lab, Route de Nozay, Marcoussis Cedex F-91461, France.
Ernesto Limiti
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, Rome 00133, Italy.
Antonio Serino
Affiliation:
Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del Politecnico 1, Rome 00133, Italy.
Vittorio Camarchia
Affiliation:
Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
Federica Cappelluti
Affiliation:
Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
Raymond Quéré
Affiliation:
XLIM-C2S2, 123 Avenue Albert Thomas, Cedex Limoges 87060, France. Phone: +33 672 190 725; Fax: +33 555 45 76 66.
*
Corresponding author: T. Reveyrand Email: [email protected]
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Abstract

The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters).

Keywords

GaNTransistorNonlinear modelNoise modelLoad-pull measurementsPower amplifierTrapping effects
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 51 - 61
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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