Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-28T02:07:53.291Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN for space application: almost ready for flight

Published online by Cambridge University Press:  19 April 2010

Jean-Luc Muraro ,
Guillaume Nicolas ,
Do Minh Nhut ,
Stéphane Forestier ,
Stéphane Rochette ,
Olivier Vendier ,
Dominique Langrez ,
Jean-Louis Cazaux  and
Marziale Feudale
Jean-Luc Muraro*
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Guillaume Nicolas
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Do Minh Nhut
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France. Thales Alenia Space, Via Saccomuro, 24 00131 Roma, Italy.
Stéphane Forestier
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Stéphane Rochette
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Olivier Vendier
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Dominique Langrez
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Jean-Louis Cazaux
Affiliation:
Thales Alenia Space, 26 Avenue Jean François Champollion, BP 1187, 31037 Toulouse Cedex, France.
Marziale Feudale
Affiliation:
Thales Alenia Space, Via Saccomuro, 24 00131 Roma, Italy.
*
Corresponding author: J.-L. Muraro Email: [email protected]
Get access Rights & Permissions [Opens in a new window]

Abstract

On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.

Keywords

Gallium nitridePower amplifiersReceiversPackagingReliabilitySatellite equipment
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 121 - 133
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]ESA, Information note: EuropeanGaN Component Development Strategy for Space Application, ESTEC/AC/418-20, ESA/IPC, 2006.Google Scholar
[2]Inoue, T. et al. : 30 GHz band over 5 W power performance of short channel AlGaN/GaN heterojunction FETs. IEEE Trans. Microwave Theory Tech., 53 (1), (2005), 74–80.CrossRefGoogle Scholar
[3]Krausse, D. et al. : Robust GaN HEMT low-noise amplifier MMICs for X- band applications, in EGAAS 2004, Amsterdam, 12–14 October 2004.Google Scholar
[4]De Jaeger, J.C. et al. : Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X band low noise amplifier, in EGAAS 2005, Paris, 3–7 October 2005.Google Scholar
[5]Parikh, P. et al. : High linearity, robust, AlGaN-GaN HEMTs for LNA & receiver Ics, in IEEE Leaster Eastman Conf., Newark DE, 6–8 August 2002.Google Scholar
[6]Suijker, E.M. et al. : Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications, CSICS 2009, Greensboro, NC, USA 11–14 October 2009.CrossRefGoogle Scholar
[7]TAS-I Internal Report RPT-RFP-ESA-0002.Google Scholar
[8]Phased-Array and Radar Astounding Breakthroughs An Update RadarCon-2008, May 26–30, 2008, Rome, Italy.Google Scholar
[9]Quay, R. et al. : Efficient AlGaN/GaN HEMT Power Amplifiers, in EuMa, 2008, 87–90.Google Scholar
[10]Janssen, J.; Van Heijningen, M.; Provenzano, G.; Visser, G.C.; Morvan, E.; Van Vliet, F.E.: X-band robust AlGaN/GaN receiver MMICs with over 41 dBm power handling F.E., in IEEE Compound Semiconductor Integrated Circuits Symp., 2008. CSICS '08.CrossRefGoogle Scholar
[11]Ciccognani, W.; De Dominicis, M.; Ferrari, M.; Limiti, E.; Peroni, M.; Romanini, P.: High power monolithic AlGaN/GaN HEMT switch for X-Band applications. IET Electron. Lett., 44 (15) (2008), 911–913.CrossRefGoogle Scholar
[12]Mitani, M. et al. : 800 W AIGaN/GaN HEMT S-band transistor, in MANTECH Conf., 5114–17/07, Austin, TX.Google Scholar
[13]Lupa, I.: Phased array – technology and trends, in Int. Radar Symp. India 2007 (lRSI-2007), 2007.Google Scholar
[14]Forestier, S.; Vendier, O. et al. : S band HPA based on diamond copper micropackage, in RF&Hyper Europe Symp., Paris, 2005.Google Scholar
[15]del Alamo, J.A.: GaN HEMT reliability. Microelectron. Reliab., 49 (2009), 1200–1206.CrossRefGoogle Scholar
[16]Muraro, J.L. et al. : Safe operating area for new generation of space satellite SSPA based on wide band gap semiconductors, in European Space Agency, Workshop Wide Bandgap, Noordwijk 2–3 April 2007.Google Scholar