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Published online by Cambridge University Press: 15 October 2013
An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.