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Design of high transformation ratio millimeter-wave integrated transformers

Published online by Cambridge University Press:  05 January 2012

Bernardo Leite ,
Eric Kerhervé ,
Jean-Baptiste Bégueret  and
Didier Belot
Bernardo Leite*
Affiliation:
IMS Laboratory, University of Bordeaux, 33405 Talence Cedex, France
Eric Kerhervé
Affiliation:
IMS Laboratory, University of Bordeaux, 33405 Talence Cedex, France
Jean-Baptiste Bégueret
Affiliation:
IMS Laboratory, University of Bordeaux, 33405 Talence Cedex, France
Didier Belot
Affiliation:
STMicroelectronics, 38926 Crolles Cedex, France
*
Corresponding author: B. Leite Email: [email protected]
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Abstract

A novel topology for millimeter-wave-integrated transformers is proposed. The windings are stacked and secondaries are designed with different trace widths and different diameters from that of the primary, in order to obtain relatively high-inductance transformation ratios. Measurement and simulation results of 65 nm Complementary Metal Oxide Semiconductor (CMOS) and 130 nm combination of Bipolar and CMOS (BiCMOS) transformers present the impact of this structure on the inductances, quality factor, coupling coefficient, and minimum insertion loss. Within certain limits on the trace widths, it is shown that the proposed topology not only increases the transformation ratio but also improves its overall performance.

Keywords

Transformersintegrated circuitsmillimeter-waveimpedance matching
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 2: Special issue on Surveillance Systems for Air Navigation Services , April 2012 , pp. 233 - 239
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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References

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