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Design and analysis of 80-W wideband asymmetrical Doherty amplifier

Published online by Cambridge University Press:  01 April 2014

Khaled Bathich*
Affiliation:
Microwave Engineering Laboratory, Berlin Institute of Technology, Einsteinufer 25, D-10587, Berlin, Germany
Georg Boeck
Affiliation:
Microwave Engineering Laboratory, Berlin Institute of Technology, Einsteinufer 25, D-10587, Berlin, Germany
*
Corresponding author: K. Bathich Email: [email protected]

Abstract

This paper presents the analysis and design of a wideband asymmetrical Doherty amplifier. The frequency response of the output combining network of the Doherty amplifier with arbitrary back-off level configuration is analyzed. Other bandwidth-limiting factors were discussed and analyzed as well. A number of performance enhancement techniques were taken into consideration to obtain high and flat back-off efficiency over the amplifier design band of 1.7–2.25 GHz. The designed Doherty amplifier had, at 8.0–9.9 dB output back-off, a minimum efficiency of η = 50% [power-added efficiency of 45%], measured near 40 dBm of output power, and over 28% bandwidth. Using digital predistortion (DPD) linearization, an adjacent-channel leakage ratio (ACLR) of −43 dBc was obtained for a single-carrier W-CDMA signal, at 40.9 dBm and 46% of average output power and drain efficiency, respectively. The designed amplifier represents the first wideband Doherty amplifier reported over extended power back-off range.

Type
Research Papers
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

REFERENCES

[1]Doherty, W.H.: A new high efficiency power amplifier for modulated waves. Proc. IRE, 24 (1936), 11631182.CrossRefGoogle Scholar
[2]Cripps, S.C.: Advanced Techniques in RF Power Amplifier Design, Artech House, Norwood, MA, (2002).Google Scholar
[3]Raab, F.H.: Efficiency of Doherty RF power-amplifier systems. IEEE Trans. Broadcast., BC-33 (3) (1987), 7783.CrossRefGoogle Scholar
[4]Raab, F.H. et al. : Power amplifiers and transmitters for RF and microwave. IEEE Trans. Microw. Theory Tech., 50 (3) (2002), 814826.CrossRefGoogle Scholar
[5]Bathich, K.; Markos, A.Z. and Boeck, G.: Frequency response analysis and bandwidth extension of the Doherty amplifier. IEEE Trans. Microw. Theory Tech., 59 (4) (2011), 934944.CrossRefGoogle Scholar
[6]Sun, G. and Jansen, R.H.: Broadband Doherty power amplifier via real frequency technique. IEEE Trans. Microw. Theory Tech., 60 (1) (2012), 99111.CrossRefGoogle Scholar
[7]Bathich, K. and Boeck, G.: Wideband harmonically-tuned GaN Doherty power amplifier, in IEEE MTT-S Int. Microwave Symp. Digest, June 2012.CrossRefGoogle Scholar
[8]Kang, D.; Kim, D.; Moon, J. and Kim, B.: Broadband HBT Doherty power amplifiers for handset applications. IEEE Trans. Microw. Theory Tech., 58 (12) (2010), 40314039.CrossRefGoogle Scholar
[9]Wu, D.Y.-T. and Boumiza, S.: A modified Doherty configuration for broadband amplification using symmetrical devices. IEEE Trans. Microw. Theory Tech., 60 (10) (2012), 32013213.CrossRefGoogle Scholar
[10]Bathich, K.; Markos, A.Z. and Boeck, G.: A wideband GaN Doherty amplifier with 35% fractional bandwidth, in Proc. 40th Eur. Microwave Conf., Paris, France, September 2010, 1006–1009.Google Scholar
[11]Kim, J.; Son, J.; Moon, J. and Kim, B.: A saturated Doherty power amplifier based on saturated amplifier. IEEE Microw. Wireless Compon. Lett., 20 (2) (2010), 109111.CrossRefGoogle Scholar
[12]Moon, J.; Kim, J.; Kim, I.; Kim, J. and Kim, B.: A wideband envelope tracking Doherty amplifier for WiMAX systems. IEEE Microw. Wireless Compon. Lett., 18 (1) (2008), 4951.CrossRefGoogle Scholar
[13]Lee, Y.-S.; Lee, M.-W.; Kam, S.-H. and Jeong, Y.-H.: A new wideband Distributed Doherty amplifier for WCDMA repeater applications. IEEE Microw. Wireless Compon. Lett., 19 (10) (2009), 668670.Google Scholar
[14]Qureshi, J.H.; Li, N.; Neo, W.C.E.; van Rijs, F.; Blednov, I. and de Vreede, L.C.N.: A wide-band 20W LDMOS Doherty power amplifier, in IEEE MTT-S Int. Microwave Symp. Digest, May 2010, 1504–1507.CrossRefGoogle Scholar
[15]Ericsson: LTE-An Introduction, June (2009).Google Scholar
[16]Darraji, R.; Ghannouchi, F.M. and Hammi, O.: A dual-input digitally driven Doherty amplifier architecture for performance enhancement of Doherty transmitters. IEEE Trans. Microw. Theory Tech., 59 (5) (2011), 12841293.CrossRefGoogle Scholar
[17]Kang, D.; Kim, D.; Cho, Y.; Park, B.; Kim, J. and Kim, B.: Design of bandwidth-enhanced Doherty power amplifiers for handset applications. IEEE Trans. Microw. Theory Tech., 59 (12) (2011), 34743483.CrossRefGoogle Scholar
[18]Lee, J.-Y.; Kim, J.-Y.; Kim, J.-H.; Cho, K.-J. and Stapleton, S.P.: A high power asymmetric Doherty amplifier with improved linear dynamic range, in IEEE MTT-S Int. Microwave Symp. Digest, June 2006, 1348–1351.CrossRefGoogle Scholar
[19]Kitahara, T.; Yamamoto, T. and Hiura, S.: Doherty power amplifier with asymmetrical drain voltages for enhanced efficiency at 8 dB backed-off output power, in IEEE MTT-S Int. Microwave Symp. Digest, June 2011.CrossRefGoogle Scholar