Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-18T09:08:45.105Z Has data issue: false hasContentIssue false

Concurrent dual-band SiGe HBT power amplifier for Wireless applications

Published online by Cambridge University Press:  10 March 2009

Vittorio Camarchia*
Affiliation:
Electronic Engineering Department – Politecnico di Torino, C.so Duca degli Abruzzi 24 Torino, 10129Italy.
Rocco Giofrè
Affiliation:
Electronic Engineering Department of theUniversity of Roma Tor Vergata, via del Politecnico n. 1, 00133 Roma, Italy.
Iacopo Magrini
Affiliation:
Department of Electronics and Telecommunications, University of Florence, V. S. Marta, 3, 50139 FlorenceItaly.
Luca Piazzon
Affiliation:
Electronic Engineering Department of theUniversity of Roma Tor Vergata, via del Politecnico n. 1, 00133 Roma, Italy.
Alessandro Cidronali
Affiliation:
Department of Electronics and Telecommunications, University of Florence, V. S. Marta, 3, 50139 FlorenceItaly.
Paolo Colantonio
Affiliation:
Electronic Engineering Department of theUniversity of Roma Tor Vergata, via del Politecnico n. 1, 00133 Roma, Italy.
Simona Donati Guerrieri
Affiliation:
Electronic Engineering Department – Politecnico di Torino, C.so Duca degli Abruzzi 24 Torino, 10129Italy.
Giovanni Ghione
Affiliation:
Electronic Engineering Department – Politecnico di Torino, C.so Duca degli Abruzzi 24 Torino, 10129Italy.
Franco Giannini
Affiliation:
Electronic Engineering Department of theUniversity of Roma Tor Vergata, via del Politecnico n. 1, 00133 Roma, Italy.
Marco Pirola
Affiliation:
Electronic Engineering Department – Politecnico di Torino, C.so Duca degli Abruzzi 24 Torino, 10129Italy.
Gianfranco Manes
Affiliation:
Department of Electronics and Telecommunications, University of Florence, V. S. Marta, 3, 50139 FlorenceItaly.
*
Corresponding author: V. Camarchia Email: [email protected]

Abstract

This paper presents an investigation of a concurrent low-cost dual-band power amplifier (PA) fabricated in SiGe technology, able to simultaneously operate at two frequencies of 2.45 and 3.5-GHz, including an evaluation of its system level performance potentiality. Taking into account the technology novelty and the lack of device characterization and modeling, a hybrid (MIC) approach has been adopted both for a fast prototyping of the PA and for the evaluation of the device potentiality based on an extensive linear and nonlinear characterization. The comparison of PA performance in single-band or concurrent mode operation will be presented. In particular, the measured PA prototype shows an output power of 17.2 and 17-dBm at a 1-dB compression point, at 2.45 and 3.5-GHz, respectively, for CW single-mode operation, with a power added efficiency around 20%. System-level analysis predicts that, when the PA is operated under the 20-MHz Orthogonal Frequency-Division Multiplexing (OFDM) concurrent signals, the maximum output power levels to maintain the Error Vector Magnitude (EVM) within 5% are 11 and 3.5-dBm at 2.45 and 3.5-GHz, respectively. Moreover, new concepts and possible new system architectures for the development of the next generation of the multi-band transceiver front-end will be provided with an extensive system-level evaluation of the amplifier.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Steer, M.: Beyond 3G. IEEE microwave Magazine, February 2007, 7682.Google Scholar
[2]McCune, E.: High-efficiency, multi-mode, multi-band terminal power amplifiers. IEEE Microwave Magazine, March 2005, 4455.CrossRefGoogle Scholar
[3]Abidi, A.: The path to the software defined radio receiver, IEEE Solid-State Circuits, 42 (2007), 954966.CrossRefGoogle Scholar
[4]Neo, W.C. et al. : Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks. IEEE Solid-State Circuits 41 (2006), 21662174.CrossRefGoogle Scholar
[5]Hashemi, H.; Hajimiri, A.: Concurrent multiband low-noise amplifiers–theory, design, and applications. IEEE Trans. Microwave Theory Tech., 50 (2002), 288301.CrossRefGoogle Scholar
[6]Knoll, D. et al. : A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module. Technical Digest of the International Electron Devices Meeting (IEDM) 2002, Tech. Dig., 2002, 783786.Google Scholar
[7]Knoll, D. et al. : A modular, low-cost SiGe:C BiCMOS process featuring high-FT and high-BVCEO transistors. Proc. 2004 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2004, 241244.Google Scholar
[8]Ferrero, A.; Pisani, U.: An improved calibration technique for on-wafer large-signal transistor characterization. IEEE Trans. Instrum. Meas., 47 (1993), 360364.CrossRefGoogle Scholar
[9]Colantonio, P.; Giannini, F.; Giofrè, R.; Piazzon, L.: A design technique for concurrent dual band harmonic tuned power amplifie. IEEE Trans. Microwave Theory Tech., 56 (11-Part 2) (2008), 25452555.CrossRefGoogle Scholar
[10]Colantonio, P.; Giannini, F.; Scucchia, L.: Harmonic matching design for power amplifiers. Proc. Int. Symp. on Microwave and Optical Technology, ISMOT 2007, Roma, Italy, Vol. 1, December 2007, 713716.Google Scholar