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AlGaN/GaN epitaxy and technology

Published online by Cambridge University Press:  11 March 2010

Patrick Waltereit ,
Wolfgang Bronner ,
Rüdiger Quay ,
Michael Dammann ,
Rudolf Kiefer ,
Wilfried Pletschen ,
Stefan Müller ,
Rolf Aidam ,
Hanspeter Menner  and
Lutz Kirste
...Show all authors
Patrick Waltereit*
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Wolfgang Bronner
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rüdiger Quay
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Michael Dammann
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rudolf Kiefer
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Wilfried Pletschen
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Stefan Müller
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Rolf Aidam
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Hanspeter Menner
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Lutz Kirste
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Klaus Köhler
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Michael Mikulla
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
Oliver Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg, Germany.
*
Corresponding author: P. Waltereit Email: [email protected]
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Abstract

We present an overview on epitaxial growth, processing technology, device performance, and reliability of our GaN high electron mobility transistors (HEMTs) manufactured on 3- and 4-in. SiC substrates. Epitaxy and processing are optimized for both performance and reliability. We use three different gate lengths, namely 500 nm for 1–6 GHz applications, 250 nm for devices between 6 and 18 GHz, and 150 nm for higher frequencies. The developed HEMTs demonstrate excellent high-voltage stability, high power performance, and large DC to RF conversion efficiencies for all gate lengths. On large gate width devices for base station applications, an output power beyond 125 W is achieved with a power added efficiency around 60% and a linear gain around 16 dB. Reliability is tested both under DC and RF conditions with supply voltage of 50 and 30 V for 500 and 250 nm gates, respectively. DC tests on HEMT devices return a drain current change of just about 10% under IDQ conditions. Under RF stress the observed change in output power density is below 0.2 dB after more than 1000 h for both gate length technologies.

Keywords

GaNHEMTMMICPAEReproducibilityHomogeneityReliability
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 1 , February 2010 , pp. 3 - 11
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

REFERENCES

[1]Wu, Y.-F. et al. : 30-W/mm GaNHEMTs by field plate optimization. IEEE Electron. Dev. Lett., 25 (3) (2004), 117.CrossRefGoogle Scholar
[2]Dora, Y.; Chakraborty, A.; Mccarthy, L.; Keller, S.; Denbaars, S.P.; Mishra, U.K.: High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates. IEEE Electron. Dev. Lett., 27 (9) (2006), 713.CrossRefGoogle Scholar
[3]Green, B.M.; Tilak, V.; Kaper, V.S.; Smart, J.A.; Shealy, J.R.; Eastman, L.F.: Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions. Trans. Microwave Theory Tech., 51 (2) (2003), 618.CrossRefGoogle Scholar
[4]Nikaido, J.; Kikkawa, T.; Yokokawa, S.; Tateno, Y.: A Highly Uniform and Reliable AlGaN/GaN HEMT, in Proceedings of the CS MANTECH 2005, New Orleans, USAGaAs Mantech, St. Louis, 2005, 151.Google Scholar
[5]Kikkawa, T.; Imanishi, K.; Hara, N.; Shigematsu, H.; Joshin, K.: Recent progress of GaN electronic devices for wireless communication system. Proc. SPIE, 6894 (2008), 68941Q.CrossRefGoogle Scholar
[6]Poblenz, C. et al. : Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE). J. Vac. Sci. Technol. B, 23 (2005), 1562.CrossRefGoogle Scholar
[7]Heikman, S.; Keller, S.; Den Baars, S.P.; Mishra, U.K.: Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition. Appl. Phys. Lett., 81 (2002), 439.CrossRefGoogle Scholar
[8]Poblenz, C.; Waltereit, P.; Rajan, S.; Heikman, S.J.; Mishra, U.K.; Speck, J.S.: Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors. J. Vac. Sci. Technol. B, 22 (2004), 1145.CrossRefGoogle Scholar
[9]Waltereit, P. et al. : Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures. J. Appl. Phys., 106 (23) (2009), 023535 1–7.CrossRefGoogle Scholar
[10]HRXRD Software: LEPTOS, Bruker AXS GmbH, Karlsruhe, Germany.Google Scholar
[11]Poblenz, C.; Waltereit, P.; Speck, J.S.: Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy. J. Vac. Sci. Technol. B, 23 (2005), 1379.CrossRefGoogle Scholar
[12]Bernadini, F.; Fiorentini, V.; Vanderbilt, D.: Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B, 56 (1997), R10024.Google Scholar
[13]Köhler, K. et al. : Influence of the surface potential on electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content. J. Appl. Phys. (in print, Volume 107).Google Scholar
[14]Waltereit, P.; Poblenz, C.; Rajan, S.; Wu, F.; Mishra, U.K.; Speck, J.S.: Structural properties of GaN buffer layers on 4H-SiC(0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors. Jpn. J. Appl. Phys., 43 (2004), 1520.CrossRefGoogle Scholar
[15]Benkhelifa, F. et al. : Performance and Fabrication of GaN/AlGaN Power MMIC at 10 GHz, in CS Mantech Conference 2005, New Orleans, USA, 163Google Scholar
[16]Schuh, P. et al. : X-band T/R-module front-end based on GaN MMIC. Int. J. Microwave Wirel. Technol., 1 (4) (2009), 387–394.CrossRefGoogle Scholar
[17]Waltereit, P. et al. : Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency, in International Symposium on Compound Semiconductors 2009, Santa Barbara, USA.Google Scholar
[18]Kuball, M. et al. : “Integrated Raman – IR thermography on AlGaN/GaN transistors”, IEEE MTT-S IMS Dig., 1–5 2006, 1339–1342.Google Scholar
[19]Waltereit, P. et al. : GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability. Phys. Status Solidi (a), 206 (6) (2009), 1215–1220.CrossRefGoogle Scholar