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6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology

Published online by Cambridge University Press:  30 March 2015

Marc van Heijningen ,
Jeroen A. Hoogland ,
Peter de Hek  and
Frank E. van Vliet
Marc van Heijningen*
Affiliation:
TNO, Oude Waalsdorperweg 63, 2596 AK, Den Haag, The Netherlands. Phone: +31 88 866 4071
Jeroen A. Hoogland
Affiliation:
TNO, Oude Waalsdorperweg 63, 2596 AK, Den Haag, The Netherlands. Phone: +31 88 866 4071
Peter de Hek
Affiliation:
TNO, Oude Waalsdorperweg 63, 2596 AK, Den Haag, The Netherlands. Phone: +31 88 866 4071
Frank E. van Vliet
Affiliation:
TNO, Oude Waalsdorperweg 63, 2596 AK, Den Haag, The Netherlands. Phone: +31 88 866 4071
*
Corresponding author: M. van Heijningen, Email: [email protected]
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Abstract

The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to enable a fully GaN-based front-end. In this paper, the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. First an introduction is given on the selection and dimensioning of the mixer core, in relation to the linearity and conversion loss. At the intermediate frequency (IF)-side of the mixer, an active balun has been used to compensate partly for the loss of the mixer. An on-chip local-oscillator (LO) signal amplifier has been incorporated so that the mixer can function with 0 dBm LO input power. After the discussion of the circuit design the measurement results are presented. The performance of the mixer core and passive elements has been demonstrated by measurements on a test-structure. The mixer MMIC measured conversion loss is <8 dB from 6 to 12 GHz, at 1 GHz IF and 0 dBm LO power. The measured image rejection is better than 30 dB.

Keywords

Circuit design and applicationsWide-bandgap semiconductors devices and technologiesReliability and statistical analysis
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 7 , Special Issue 3-4: European Microwave Week 2014 , June 2015 , pp. 307 - 315
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2015 

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References

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