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A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

Published online by Cambridge University Press:  25 August 2020

Florent Torres*
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920Crolles, France IMS Laboratory, CNRS5218, University of Bordeaux, Bordeaux INP. 351 cours de la Libération, 33405Talence Cedex, France
Eric Kerhervé
Affiliation:
IMS Laboratory, CNRS5218, University of Bordeaux, Bordeaux INP. 351 cours de la Libération, 33405Talence Cedex, France
Andreia Cathelin
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, 38920Crolles, France
Magali De Matos
Affiliation:
IMS Laboratory, CNRS5218, University of Bordeaux, Bordeaux INP. 351 cours de la Libération, 33405Talence Cedex, France
*
Author for correspondence: Florent Torres, E-mail: [email protected]

Abstract

This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

Type
IJMWT Special Issue on the 2019 National Microwave Days
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2020

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References

Hu, S, Wang, F and Wang, H (2017) A 28 GHz/37 GHz/39 GHz Multiband Linear Doherty Power Amplifier for 5 G Massive MIMO Applications, IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA.CrossRefGoogle Scholar
Shakib, S, Park, HC, Dunworth, J, Aparin, V and Entesari, K (2017) A Wideband 28 GHz Power Amplifier Supporting 8×100 MHz Carrier Aggregation for 5 G in 40 nm CMOS, IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA.CrossRefGoogle Scholar
Jayamon, JA, Buckwalter, JF and Asbeck, PM (2016) Multigate-Cell stacked FET design for millimeter-wave CMOS power amplifiers. IEEE Journal of Solid-States Circuits 51, 20272039.CrossRefGoogle Scholar
Larie, A, Kerhervé, E, Martineau, B, Vogt, L and Belot, D (2015) A 60 GHz 28 nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2 dBm P1 dB and 74 mW PDC, IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA.CrossRefGoogle Scholar
Torres, F, De Matos, M, Cathelin, A and Kerhervé, E (2018) A 31 GHz 2-Stage Reconfigurable Balanced Power Amplifier with 32.6 dB Power Gain, 25.5% PAEmax and 17.9 dBm Psat in 28 nm FD-SOI CMOS, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Philadelphia, PA, pp. 236–239.Google Scholar
Cathelin, A (2017) RF/Analog and mixed-signal design techniques in FD-SOI technology, Custom Integrated Circuits Conference (CICC), Austin, Tx.CrossRefGoogle Scholar
Guillaume, R, Rivet, F, Cathelin, A and Deval, Y (2017) Energy efficient distributed-oscillators at 134 and 202 GHz with phase-noise optimization through body-bias control in 28 nm FDSOI technology, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Honolulu, Hi.CrossRefGoogle Scholar
Moret, B, Knopik, V and Kerhervé, E (2017) A 28 GHz self-contained power amplifier for 5 G applications in 28 nm FD-SOI CMOS, IEEE Latin American Symposium on Circuit and Systems (LASCAS), Bariloche.CrossRefGoogle Scholar
Asada, H, Matsushita, K, Bunsen, K, Okada, K and Matsuzawa, A (2011) A 60 GHz CMOS power amplifier using capacitive cross-coupling neutralization with 16% PAE, European Microwave Conference (EUMIC), Manchester.Google Scholar
Bree, G (2007) Classic Designs for Lumped Element and Transmission Line 90-Degree Couplers, High Frequency Electronics, Available at https://www.highfrequencyelectronics.com/Sep07/HFE0907_Tutorial.pdf.Google Scholar
Knopik, V, Moret, B and Kerhervé, E (2017) Integrated scalable and tunable RF CMOS SOI quadrature hybrid coupler, European Microwave Conference (EUMIC), Nuremberg.CrossRefGoogle Scholar