Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-15T19:21:08.406Z Has data issue: false hasContentIssue false

A 60 GHz fully differential LNA in 90 nm CMOS technology

Published online by Cambridge University Press:  07 November 2013

Andrea Malignaggi*
Affiliation:
Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany. Phone: +49 30 31429189
Amin Hamidian
Affiliation:
Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany. Phone: +49 30 31429189
Georg Boeck
Affiliation:
Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany. Phone: +49 30 31429189 Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), Berlin, Germany
*
Corresponding author: A. Malignaggi Email: [email protected]

Abstract

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2 pads included. The detailed design procedure and the achieved measurement results are presented in this work.

Type
Research Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Kang, K. et al. : A 60-GHz OOK receiver with an on-chip antenna in 90 nm CMOS. JSSC, 45 (2010), 17201731.Google Scholar
[2]Kuo, H.-C. et al. : A 60-GHz CMOS sub-harmonic RF receiver with integrated on-chip artificial-magnetic-conductor yagi antenna and balun bandpass filter for very-short-range gigabit communications, in IEEE MTT, Early Access Article, 2013.CrossRefGoogle Scholar
[3]Kim, K.-J. et al. : A 60 GHz wideband phased-array LNA with short-stub passive vector generator. IEEE Microw. Wirel. Compon. Lett., 20 (11) (2010), 628630.CrossRefGoogle Scholar
[4]Hamidian, A.; Subramanian, V.; Shu, R.; Malignaggi, A.; Boeck, G.: Extraction of RF feeding structures for accurate device modeling up to 100 GHz, in IEEE IMWS, September 2011, 113–116.CrossRefGoogle Scholar
[5]Hamidian, A.; Subramanian, V.; Shu, R.; Malignaggi, A.; Boeck, G.: Device characterization in 90 nm CMOS up to 100 GHz, in IEEE SCD, September 2011, 1–4.CrossRefGoogle Scholar
[6]Hamidian, A.; Subramanian, V.; Shu, R.; Malignaggi, A.; Boeck, G.: Coplanar transmission lines on silicon substrates for the mm-wave applications, in IEEE Mikon, May 2012, 27–30.CrossRefGoogle Scholar
[7]Malignaggi, A.; Hamidian, A.; Shu, R.; Kamal, A.M.; Boeck, G.: Analytical study and performance comparison of mm-wave CMOS LNAs, in Accepted for publication in IEEE EUmW, October 2013.Google Scholar
[8]Dickson, T.O. et al. : The invariance of characteristic current densities in nanoscale MOSFETs and its impact on algorithmic design methodologies and design porting of Si(Ge) (Bi)CMOS high-speed building blocks. IEEE JSSC, 41 (8) (2006), 18301845.Google Scholar
[9]Abidi, A.A.; LeeteCoh, J.C.: De-Embedding the noise figure of differential amplifiers. IEEE JSSC, 34 (6) (1999), 882885.Google Scholar
[10]Cohen, E. et al. : An ultra low power LNA with 15 dB gain and 4.4db NF in 90 nm CMOS process for 60 GHz phase array radio, in IEEE RFIC, June 2008, 61–64.CrossRefGoogle Scholar
[11]Kang, K. et al. : A 60 GHz LNA with 18.6 dB gain and 5.7 dB NF in 90 nm CMOS, in IEEE ICMMT, May 2010, 164–167.CrossRefGoogle Scholar
[12]Ko, C.-L. et al. : A 1-V 60 GHz CMOS low noise amplifier with low loss microstrip lines, in IEEE VLSI-DAT, April 2012, 1–4.Google Scholar
[13]Mitomo, T. et al. : A 60-GHz CMOS receiver front-end with frequency synthesizer. IEEE JSSC, 43 (4) (2008), 10301037.Google Scholar
[14]Cohen, E. et al. : Robust 60 GHz 90 nm and 40 nm CMOS wideband neutralized amplifiers with 23 dB gain 4.6 dB NF and 24% PAE, in IEEE SiRF, January 2012, 207–210.CrossRefGoogle Scholar
[15]Chang, P.-Y. et al. : An ultra-low-power transformer-feedback 60 GHz low-noise amplifier in 90 nm CMOS. IEEE Microw. Wirel. Compon. Lett., 22 (4) (2012), 197199.CrossRefGoogle Scholar
[16]Song, I. et al. : A simple figure of merit of RF MOSFET for low-noise amplifier design. IEEE Electron Device Lett., 29 (2008), 13801382.CrossRefGoogle Scholar