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A 60 GHz fully differential LNA in 90 nm CMOS technology

Published online by Cambridge University Press:  07 November 2013

Andrea Malignaggi*
Affiliation:
Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany. Phone: +49 30 31429189
Amin Hamidian
Affiliation:
Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany. Phone: +49 30 31429189
Georg Boeck
Affiliation:
Microwave Engineering Lab, Berlin Institute of Technology, Berlin, Germany. Phone: +49 30 31429189 Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), Berlin, Germany
*
Corresponding author: A. Malignaggi Email: [email protected]

Abstract

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2 pads included. The detailed design procedure and the achieved measurement results are presented in this work.

Type
Research Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2013 

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