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60 GHz current gain cut-off frequency graphene nanoribbon FET

Published online by Cambridge University Press:  19 October 2010

Nan Meng ,
Francsico-Javier Ferrer ,
Dominique Vignaud ,
Gilles Dambrine  and
Henri Happy
Nan Meng
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Francsico-Javier Ferrer
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Dominique Vignaud
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Gilles Dambrine
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
Henri Happy*
Affiliation:
IEMN – CNRS 8520, Avenue Poincare, 59652 Villeneuve d'ASCQ Cedex, France. Phone: +33 3 20 19 78 41.
*
Corresponding author: H. Happy Email: [email protected]
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Abstract

We report investigations on the fabrication and characterization of graphene nanoribbon (GNR) field-effect transistors. Graphene layers are obtained from the thermal decomposition of a Si-face 4H-SiC substrate. To achieve high dynamic performance, a structure with an array of GNR connected in parallel was fabricated by e-beam lithography. The best intrinsic current gain cut-off frequency of 60 GHz and maximum oscillation frequency of 28 GHz were achieved. This study demonstrates the exciting potential of GNR in high-frequency electronics.

Keywords

Graphene FETRibbonHF characterizationGNR
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 2 , Issue 5 , October 2010 , pp. 441 - 444
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

[1]Novoselov, K.S. et al. : Electric field effect in atomically thin carbon films. Science, 306 (2004), 666–669. DOI: 10.1126/science.1102896.CrossRefGoogle ScholarPubMed
[2]Morozov, S.V. et al. : Giant intrinsic carrier mobilities in graphene and its bilayer. Phys. Rev. Lett., 100 (2008), 016602–016604. DOI: 10.1103/PhysRevLett.100.016602.CrossRefGoogle ScholarPubMed
[3]Bolotin, K. et al. : Ultrahigh electron mobility in suspended graphene. Solid State Commun., 146 (2008), 351–355. DOI: 10.1016/j.ssc.2008.02.024.CrossRefGoogle Scholar
[4]Liao, L. et al. : High-speed graphene transistors with a self-aligned nanowire gate. Nature, 467 (2010), 305–308. DOI: 10.1038/nature09405.CrossRefGoogle ScholarPubMed
[5]Lin, Y. et al. : 100-GHz transistors from wafer-scale epitaxial graphene. Science, 327 (2010), 662. DOI: 10.1126/science.1184289.Google Scholar
[6]Meric, I.; Baklitskaya, N.; Kim, P.; Shepard, K.: 2008 RF performance of top-gated, zero-bandgap graphene field-effect transistors, In IEEE Int. Electron Devices Meeting, San Francisco, CA, 2008. DOI: 10.1109/IEDM.2008.4796738.Google Scholar
[7]Zhu, J.; Woo, J.: A novel graphene channel field effect transistor with Schottky tunneling source and drain, in 37th European Solid State Device Research Conf., Germany, 2007. DOI: 10.1109/ESSDERC.2007.4430923.Google Scholar
[8]Moon, J.S. et al. : Top-gated epitaxial graphene FETs on Si-Face SiC wafers with a peak transconductance of 600 mS/mm. IEEE Electron Device Lett., 31 (2010), 260–262. DOI: 10.1109/LED.2010.2040132.CrossRefGoogle Scholar
[9]Kedzierski, J. et al. : Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition. IEEE Electron Device Lett., 30 (2009), 745–747. DOI: 10.1109/LED.2009. 2020615.CrossRefGoogle Scholar
[10]Wu, Y.Q. et al. : Top-gated graphene field-effect-transistors formed by decomposition of SiC. Appl. Phys. Lett., 92 (2008), 092102. DOI: 10.1063/1.2889959.CrossRefGoogle Scholar
[11]Lemme, M. et al. : Mobility in graphene double gate field effect transistors. Solid-State Electron., 52 (2008), 514–518. DOI: 10.1016/j.sse.2007.10.054.CrossRefGoogle Scholar
[12]Xia, F.; Farmer, D.B.; Lin, Y.; Avouris, P.: Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Lett., 10 (2010), 715–718. DOI: 10.1021/nl9039636.Google Scholar
[13]Forbeaux, I.; Themlin, J.; Debever, J.: Heteroepitaxial graphite on 6H-SiC(0001): Interface formation through conduction-band electronic structure. Phys. Rev. B (Condens. Matter Mater. Phys.), 58 (1998), 16396–16406.CrossRefGoogle Scholar
[14]Berger, C. et al. : Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B, 108 (2004), 19912–19916. DOI: 10.1021/jp040650f.CrossRefGoogle Scholar
[15]Rollings, E. et al. : Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate. J. Phys. Chem. Solids, 67 (2006), 2172–2177. DOI: 10.1016/j.jpcs.2006.05.010.CrossRefGoogle Scholar
[16]Oshima, C.; Nagashima, A.: Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces. J. Phys.: Condens. Matter, 9 (1997), 1–20.Google Scholar
[17]Cao, H. et al. : Large-scale graphitic thin films synthesized on Ni and transferred to insulators: Structural and electronic properties. J. Appl. Phys., 107 (2010), 044310. DOI: 10.1063/1.3309018CrossRefGoogle Scholar
[18]Ferrer, Fernandez, J.; Moreau, E.; Vignaud, D.; Godey, S.; Wallart, X.: Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux. Semicond. Sci. Technol., 24 (2009), 125014. DOI: 10.1088/0268–1242/24/12/125014.Google Scholar
[19]Nougaret, L. et al. : 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes. Appl. Phys. Lett., 94 (2009), 243505–3. DOI: 10.1063/1.3155212.Google Scholar