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A 280 W LDMOS broadband Doherty PA with 52% of fractional bandwidth based on a multi-line impedance inverter for DVB-T applications

Published online by Cambridge University Press:  07 April 2016

Alessandro Cidronali ,
Niccolò Giovannelli ,
Stefano Maddio ,
Andrea Del Chiaro ,
Christian Schuberth ,
Thomas Magesacher  and
Peter Singerl
Alessandro Cidronali*
Affiliation:
Department of Information Engineering, University of Florence, V. S. Marta, 3 50139 Florence, Italy. Phone: +39.055. 2758543
Niccolò Giovannelli
Affiliation:
Infineon Technologies AG, Neubiberg 85579, Germany
Stefano Maddio
Affiliation:
Department of Information Engineering, University of Florence, V. S. Marta, 3 50139 Florence, Italy. Phone: +39.055. 2758543
Andrea Del Chiaro
Affiliation:
Infineon Technologies AG, Neubiberg 85579, Germany
Christian Schuberth
Affiliation:
Infineon Technologies Austria AG, Villach 9500, Austria
Thomas Magesacher
Affiliation:
Department of Electrical and Information Technology, Lund University, Lund, Sweden
Peter Singerl
Affiliation:
Infineon Technologies AG, Neubiberg 85579, Germany
*
Corresponding author:A. Cidronali Email: [email protected]
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Abstract

We introduce a new technique for the design of an output combiner for Doherty power amplifier (DPA) and its effective exploitation for the development of a wideband laterally diffused metal oxide semiconductor (LDMOS) DPA. The design is enabled by a two-line impedance inverter for the DPA back-off operation, which is capable of 52% of fractional bandwidth. The technique is validated by the development of a DPA prototype for Ultra high frequency terrestrial digital video broadcast (DVB-T) applications, with optimized peak power and efficiency over 470–806 MHz. The prototype delivers between 40 and 53% of average efficiency across the band, at 49 dBm output power in average across the bandwidth, and supporting DVB-T signals with 8 MHz bandwidth and a peak-to-average power ratio of 10.5 dB. It achieves the target adjacent channel power ratio of −52 dBc at 750 MHz if digital pre-distortion is applied, and provides 47.8 dBm of output power with a drain efficiency of 44.3%.

Keywords

Broadband PALDMOSDoherty power amplifierDVB-T
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 8 , Issue 8 , December 2016 , pp. 1141 - 1153
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2016 

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References

REFERENCES

[1] Kim, B.; Junghwan, M.; Kim, I.: Efficiently amplified. IEEE Microw. Mag., 5 (2010), 87–100.Google Scholar
[2] Cripps, S.C.: RF Power Amplifiers for Wireless Communications, Artech House, Norwood, MA, 2006.Google Scholar
[3] Cidronali, A.; Mercanti, M.; Giovannelli, N.; Maddio, S.; Manes, G.: On the signal probability distribution conscious characterization of GaN devices for optimum envelope tracking PA design. IEEE Microw. Wireless Comp. Lett., 7 (2013), 380–382.Google Scholar
[4] Cidronali, A.; Giovannelli, N.; Magrini, I.; Manes, G.: Compact concurrent dual-band power amplifier for 1.9 GHz WCDMA and 3.5 GHz OFDM wireless systems, in Proc. of the 38th European Microwave Conf., 2008, 518–521.Google Scholar
[5] Cidronali, A.; Giovannelli, N.; Mercanti, M.; Maddio, S.; Manes, G.: Concurrent dual-band envelope tracking GaN PA design and its 2D shaping function characterization. Int. J. Microw. Wireless Technol., 6 (2013), 669–681.Google Scholar
[6] Kim, B. et al. : Push the envelope: design concepts for envelope-tracking power amplifiers. IEEE Microw. Mag., 3 (2013), 68–81.CrossRefGoogle Scholar
[7] Cidronali, A.; Giovannelli, N.; Vlasits, T.; Hernaman, R.; Manes, G.: A 240 W dual-band 870 and 2140 MHz envelope tracking GaN PA designed by a probability distribution conscious approach, in IEEE MTT-S Int. Microwave Symp., Baltimore, MD, 2011, 1–4.Google Scholar
[8] Kim, B.; Kim, J.; Kim, I.; Ha, J.: The Doherty power amplifier. IEEE Microw. Mag., 5 (2006), 42–50.CrossRefGoogle Scholar
[9] Ladebusch, U.; Liss, C.A.: Terrestrial DVB (DVB-T): a broadcast technology for stationary portable and mobile use. IEEE Proc., 1 (2006), 183–193.Google Scholar
[10] Bathich, K.; Boeck, G.: Design and analysis of 80-W wideband asymmetrical Doherty amplifier. Int. J. Microw. Wireless Technol., 7.01 (2015), 13–18.Google Scholar
[11] Piazzon, L.; Giofre, R.; Colantonio, P.; Giannini, F.: A wideband Doherty architecture with 36% of fractional bandwidth. IEEE Microw. Wireless Comp. Lett., 11 (2013), 626–628.Google Scholar
[12] Chuanhui, M.; Wensheng, P.; Shihai, S.; Chaojin, Q.; Youxi, T.: A wideband Doherty power amplifier with 100 MHz instantaneous bandwidth for LTE-advanced applications. IEEE Microw. Wireless Comp. Lett., 11 (2013), 614–616.Google Scholar
[13] Moronval, X.; Abdoelgafoer, R.; Déchansiaud, A.: MMIC-based asymmetric Doherty power amplifier for small cells applications. Int. J. Microw. Wireless Technol., 7 (5) (2015), 499–505.Google Scholar
[14] Theeuwen, S.J.C.H.; Qureshi, J.H.: LDMOS technology for RF power amplifiers. IEEE Trans. Microw. Theory Tech., 6 (2012), 1755–1763.Google Scholar
[15] Giovannelli, N. et al. : A 250 W LDMOS Doherty PA with 31% of fractional bandwidth for DVB-T applications, in IEEE MTT-S Int. Microwave Symp., Tampa, FL, 2014, 1–4.Google Scholar
[16] Qureshi, J.H.; Li, N., Neo, W.C.E.; van Rijs, F.; Blednov, I.; de Vreede, L.C.N.: A wide-band 20 W LMOS Doherty power amplifier, in IEEE MTT-S Int. Microwave Symp., Anaheim, CA, 2010, 1–4.Google Scholar
[17] Kang, D.; Kim, D.; Cho, Y.; Park, B.; Kim, Y.; Kim, B.: Design of bandwidth-enhanced Doherty power amplifiers for handset applications. IEEE Trans. Microw. Theory Tech., 12 (2011), 3474–3483.Google Scholar
[18] Yu-Ting, D.; Annes, J.; Bokatius, M.; Kravavac, P.H.; Tucker, G.: A 350 W, 790 to 960 MHz wideband LDMOS Doherty amplifier using modified combining scheme, in IEEE MTT-S Int. Microwave Symp., Tampa, FL, 2014, 1–4.Google Scholar
[19] Qureshi, J.H.; Sneijers, W.; Keenan, R.; de Vreede, L.C.N.; van Rijs, F.: A 700-W peak ultra-wideband broadcast Doherty amplifier, in IEEE MTT-S Int. Microwave Symp., Tampa, 2014, 1–4.Google Scholar
[20] Gustafsson, D.; Andersson, C.M.; Fager, C.: A modified Doherty power amplifier with extended bandwidth and reconfigurable efficiency. IEEE Trans. Microw. Theory Tech., 1 (2013), 533–542.Google Scholar
[21] Ahmed, A. et al. : A 350 W, 2 GHz, 44% efficient LDMOS power amplifier design with capability to handle a wideband 65 MHz envelope signal, in IEEE MTT-S Int. Microwave Symp., Montreal, CA, 2012, 1–4.Google Scholar
[22] Fagotti, R.; Cidronali, A.; Manes, G.: Concurrent hex-band GaN power amplifier for wireless communication systems. IEEE Microw. Wireless Comp. Lett., 2 (2011), 89–91.Google Scholar
[23] Morgan, D.R.; Ma, Z.; Kim, J.; Zierdt, M.G.; Pastalan, J.: A generalized memory polynomial model for digital predistortion of RF power amplifiers. IEEE Trans. Signal Process., 54 (10) (2006), 3852–3860.Google Scholar