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243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

Published online by Cambridge University Press:  25 February 2014

Axel Tessmann ,
Volker Hurm ,
Arnulf Leuther ,
Hermann Massler ,
Rainer Weber ,
Michael Kuri ,
Markus Riessle ,
Hans-Peter Stulz ,
Martin Zink  and
Michael Schlechtweg
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Axel Tessmann*
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Volker Hurm
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Arnulf Leuther
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Hermann Massler
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Rainer Weber
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Michael Kuri
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Markus Riessle
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Hans-Peter Stulz
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Martin Zink
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Michael Schlechtweg
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Oliver Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Tapani Närhi
Affiliation:
European Space Research and Technology Center (ESA/ESTEC), P.O. Box 299, 2200 AG Noordwijk, The Netherlands
*
Corresponding author: A. Tessmann Email: [email protected]
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Abstract

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.

Keywords

Circuit design and applicationsLow-noise and communication receivers
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 3-4: European Microwave Week 2013 , June 2014 , pp. 215 - 223
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

REFERENCES

[1]Lai, R. et al. : Sub 50 nm InP HEMT device with F max greater than 1 THz, in IEEE Electron Devices Meeting, December 2007, 609–611.CrossRefGoogle Scholar
[2]Hacker, J. et al. : THz MMICs based on InP HBT technology, in IEEE MTT-S Int. Microwave Symp. Dig., May 2010, 1126–1129.CrossRefGoogle Scholar
[3]Leuther, A. et al. : 35 nm metamorphic HEMT MMIC technology, in 20th Int. Conf. on Indium Phosphide and Related Materials, MoA3.3, May 2008.Google Scholar
[4]Samoska, L.A.: An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime. IEEE Trans. THz Sci. Technol., 1 (1) (2011), 9–24.CrossRefGoogle Scholar
[5]Weber, R. et al. : An H-Band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology, in Eur. Microwave Integrated Circuits Conf. (EuMIC), October 2012, 187–190.Google Scholar
[6]Schmalz, K.; Borngraeber, J.; Mao, Y.; Ruecker, H.; Weber, R.: A 245 GHz LNA in SiGe technology. IEEE Microw. Wireless Compon. Lett., 22 (10) (2012), 533–535.Google Scholar
[7]Gaier, T. et al. : Measurement of a 270 GHz low noise amplifier with 7.5 dB noise figure. IEEE Microw. Wireless Compon. Lett., 17 (7) (2007), 546–548.CrossRefGoogle Scholar
[8]Sarkozy, S. et al. : Amplifier based broadband pixel for sub-millimeter wave imaging. Opt. Eng. 51 (9) (2012), 091602. http://dx.doi.org/10.1117/1.OE.51.9.091602.CrossRefGoogle Scholar
[9]Tessmann, A. et al. : A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers, in Eur. Microwave Integrated Circuits Conf. (EuMIC), October 2013, 220–223.Google Scholar
[10]Deal, W.; Mei, X.B.; Leong, K.M.K.H.; Radisic, V.; Sarkozy, S.; Lai, R.: THz monolithic integrated circuits using InP high electron mobility transistors. IEEE Trans. THz Sci. Technol., 1 (1) (2011), 25–32.Google Scholar
[11]Tessmann, A.; Leuther, A.; Massler, H.; Seelmann-Eggebert, A.: A high gain 600 GHz amplifier TMIC using 35 nm metamorphic HEMT technology, in 2012 IEEE CSIC Symp. Digest, October 2012, 1–4.CrossRefGoogle Scholar
[12]Leuther, A. et al. : 50 nm MHEMT technology for G- and H-Band MMICs, in 19th Int. Conf. on Indium Phosphide and Related Materials, May 2007, 25–27.CrossRefGoogle Scholar
[13]Hurm, V. et al. : A 243 GHz LNA module based on mHEMT MMICs with integrated waveguide transitions. IEEE Microw. Wireless Compon. Lett., 23 (9) (2010), 486–488.Google Scholar
[14]Varonen, M. et al. : 160–270-GHz InP HEMT MMIC low-noise amplifiers, in 2012 IEEE CSIC Symp. Digest, October 2012, 1–4.Google Scholar
[15]Fung, A. et al. : Low noise amplifier modules from 220–270 GHz, in Eur. Microwave Integrated Circuits Conf. (EuMIC), October 2013, 224–227.Google Scholar
[16]Deal, W.R. et al. : Scaling of InP HEMT cascode integrated circuits to THz frequencies, in 2010 IEEE CSIC Symp. Digest, October 2010, 1–4.Google Scholar
[17]Deal, W.R.: Solid-state amplifiers for terahertz electronics, in IEEE MTT-S Int. Microwave Symp. Digest, May 2010, 1122–1125.CrossRefGoogle Scholar