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243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

Published online by Cambridge University Press:  25 February 2014

Axel Tessmann ,
Volker Hurm ,
Arnulf Leuther ,
Hermann Massler ,
Rainer Weber ,
Michael Kuri ,
Markus Riessle ,
Hans-Peter Stulz ,
Martin Zink  and
Michael Schlechtweg
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Axel Tessmann*
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Volker Hurm
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Arnulf Leuther
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Hermann Massler
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Rainer Weber
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Michael Kuri
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Markus Riessle
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Hans-Peter Stulz
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Martin Zink
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Michael Schlechtweg
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Oliver Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany. Phone: +49 761 5159 539
Tapani Närhi
Affiliation:
European Space Research and Technology Center (ESA/ESTEC), P.O. Box 299, 2200 AG Noordwijk, The Netherlands
*
Corresponding author: A. Tessmann Email: [email protected]
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Abstract

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.

Keywords

Circuit design and applicationsLow-noise and communication receivers
Type
Research Paper
Information
International Journal of Microwave and Wireless Technologies , Volume 6 , Issue 3-4: European Microwave Week 2013 , June 2014 , pp. 215 - 223
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

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