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A 160-GHz low-noise downconversion receiver front-end in a SiGe HBT technology

Published online by Cambridge University Press:  15 March 2011

Erik Öjefors ,
Franck Pourchon ,
Pascal Chevalier  and
Ullrich R. Pfeiffer
Erik Öjefors*
Affiliation:
University of Wuppertal, Rainer-Gruenter-Strasse 21, D-42119 Wuppertal, Germany. Phone: +49 202 439 1453.
Franck Pourchon
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France.
Pascal Chevalier
Affiliation:
STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France.
Ullrich R. Pfeiffer
Affiliation:
University of Wuppertal, Rainer-Gruenter-Strasse 21, D-42119 Wuppertal, Germany. Phone: +49 202 439 1453.
*
Corresponding author: E. Öjefors Email: [email protected]
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Abstract

A 160-GHz SiGe-HBT (Heterojunction Bipolar Transistor) down-conversion receiver front-end for use in active millimeter-wave imaging arrays and D-band communication applications is presented. The monolithic front-end consists of a three-stage low-noise amplifier providing 24 dB of gain and a Gilbert-cell mixer capable of operating from a −8-dBm LO signal. A fully differential architecture compatible with balanced on or off-chip antennas is used to avoid the need for on-chip baluns in antenna-integrated applications. The implemented downconversion front-end consumes 50 mA from a 3.3 V supply and requires a 0.1 mm2 die area (excl. pads) per channel. With a 160-GHz input signal and an Intermediate Frequency (IF) of 1 GHz, the implemented front-end yields a 25-dB conversion gain, a −30-dBm input compression point, and a 9-dB/7-dB (with/without auxiliary on-chip input balun) system noise figure.

Keywords

Si-based DevicesIC TechnologiesLow NoiseCommunication Receivers
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 3 , Special Issue 3: Special Issue on European Microwave Week 2010 , June 2011 , pp. 347 - 353
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2011

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References

REFERENCES

[1]Siegel, P.H.: Terahertz technology. IEEE Trans. Microw. Theory Tech., 50(3) (2002), 910–928. doi: 10.1109/22.989974CrossRefGoogle Scholar
[2]Kukutsu, N. et al. : 10-Gbit/s wireless link using 120-GHz-band MMIC technologies, in 33rd Int. Conf. on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Pasadena, CA, 2008. doi: 10.1109/ICIMW.2008.4665692CrossRefGoogle Scholar
[3]Deal, W.R.; Yujiri, L.; Siddiqui, M.; Lai, R.: Advanced MMIC for passive millimeter and submillimeter wave imaging, in IEEE Int. Solid-State Circuits Conf., San Francisco, CA, 2007. doi: 10.1109/ISSCC.2007.373549CrossRefGoogle Scholar
[4]Tessmann, A.; Kallfass, I.; Leuther, A.; Massler, H.; Schlechtweg, M.; Ambacher, O.: Metamorphic MMICs for operation beyond 200 GHz, in Proc. 3rd European Microwave Integrated Circuits Conf., Amsterdam, The Neatherlands, 2008. doi: 10.1109/EMICC.2008.4772266CrossRefGoogle Scholar
[5]Chantre, A. et al. : Pushing conventional SiGe HBT technology towards “Dotfive” terahertz, in Proc. 5th European Microwave Integrated Circuits Conf. (EuMIC), Paris, France, 2010.Google Scholar
[6]Babakhani, A.; Guan, X.; Komijani, A.; Natarajan, A.; Hajimiri, A.: A 77-GHz phased array transceiver with on-chip antennas in silicon: receiver and antennas. IEEE J. Solid-State Circuits, 41(12) (2006), 2795–2806. doi: 10.1109/JSSC.2006.884811CrossRefGoogle Scholar
[7]Reynolds, S.K. et al. : A 16-element phased-array receiver IC for 60-GHz communications in SiGe BiCMOS, in IEEE Radio Frequency Integrated Circuits Symp. (RFIC), Anaheim, CA, 2010. doi: 10.1109/RFIC.2010.5477306CrossRefGoogle Scholar
[8]Öjefors, E.; Pfeiffer, U.: A 94-GHz monolithic front-end for imaging arrays in SiGe:C technology, in European Microwave Integrated Circuits Conf. (EuMIC), Amsterdam, The Neatherlands, 2008. doi: 10.1109/EUMC.2008.4751739CrossRefGoogle Scholar
[9]May, J.W.; Rebeiz, G.M.: High-performance W-band SiGe RFICs for passive millimeter-wave imaging, in IEEE Radio Frequency Integrated Circuits Symp. (RFIC), Boston, MA, 2009. doi: 10.1109/RFIC.2009.5135575CrossRefGoogle Scholar
[10]Laskin, E.; Chevalier, P.; Sautreuil, B.; Voinigescu, S.P.: A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters, in IEEE BCTM, Capri, Italy, 2009. doi: 10.1109/BIPOL.2009.5314245Google Scholar
[11]Pfeiffer, U.R.; Öjefors, E.; Zhao, Y.: A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz, in IEEE Int. Solid-State Circuits Conf., San Francisco, CA, 2010. doi: 10.1109/ISSCC.2010.5433832CrossRefGoogle Scholar
[12]Öjefors, E.; Pourchon, F.; Chevalier, P.; Pfeiffer, U.: A 160-GHz low-noise downconverter in a SiGe HBT technology, in European Microwave Conf. (EuMC), Paris, France, 2010.CrossRefGoogle Scholar
[13]Chevalier, P. et al. : A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f MAX, in IEEE BCTM, Capri, Italy, 2009. doi: 10.1109/BIPOL.2009.5314250CrossRefGoogle Scholar
[14]Schroter, M.: A geometry scalable physics-based compact bipolar transistor model. IEICE Trans. Electroni. (Special Issue on Analog Circuit Device Technol.), E88-C(6) (2005), 1098–1113.CrossRefGoogle Scholar
[15]Voinigescu, S.P. et al. : A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design. IEEE J. Solid State Circuits, 32(9) (1997), 1430–1439. doi: 10.1109/4.628757CrossRefGoogle Scholar