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A 120 GHz FMCW radar frontend demonstrator based on a SiGe chipset

Published online by Cambridge University Press:  19 April 2012

Martin Jahn  and
Andreas Stelzer
Martin Jahn*
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468
Andreas Stelzer
Affiliation:
Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria. Phone: +43 732 2468
*
Corresponding author: M. Jahn Email: [email protected]
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Abstract

This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz, which features silicon–germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114 and 130 GHz and a corresponding dual–transceiver (TRX) chip that supports monostatic and quasi-monostatic radar configurations. The cascode amplifiers used in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar frontend with on-board differential microstrip antennas was built on an RF substrate. FMCW radar measurements with frequency chirps from 116 to 123 GHz verified the functionality of the designed radar sensor.

Keywords

Circuit design and applicationRadar applicationFrequency-modulated continuous wave
Type
Research Papers
Information
International Journal of Microwave and Wireless Technologies , Volume 4 , Special Issue 3: European Microwave Week 2011 , June 2012 , pp. 309 - 315
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2012

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