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A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation

Published online by Cambridge University Press:  31 January 2014

GIUSEPPE ALÌ ,
GIOVANNI MASCALI ,
VITTORIO ROMANO  and
ROSA CLAUDIA TORCASIO
GIUSEPPE ALÌ
Affiliation:
Dipartimento di Matematica, Università della Calabria and INFN-Gruppo c. Cosenza, 87036 Cosenza, Italy emails: [email protected]; [email protected]; [email protected]
GIOVANNI MASCALI
Affiliation:
Dipartimento di Matematica, Università della Calabria and INFN-Gruppo c. Cosenza, 87036 Cosenza, Italy emails: [email protected]; [email protected]; [email protected]
VITTORIO ROMANO
Affiliation:
Dipartimento di Matematica e Informatica, Università di Catania, viale A. Doria 6, 95125 Catania, Italy email: [email protected]
ROSA CLAUDIA TORCASIO
Affiliation:
Dipartimento di Matematica, Università della Calabria and INFN-Gruppo c. Cosenza, 87036 Cosenza, Italy emails: [email protected]; [email protected]; [email protected]
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Abstract

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We present the first macroscopical model for charge transport in compound semiconductors to make use of analytic ellipsoidal approximations for the energy dispersion relationships in the neighbours of the lowest minima of the conduction bands. The model considers the main scattering mechanisms charges undergo in polar semiconductors, that is the acoustic, polar optical, intervalley non-polar optical phonon interactions and the ionized impurity scattering. Simulations are shown for the cases of bulk 4H and 6H-SiC.

Keywords

Compound semiconductorsHydrodynamical modelsMaximum entropy principle
Type
Papers
Information
European Journal of Applied Mathematics , Volume 25 , Issue 2 , April 2014 , pp. 255 - 276
Copyright
Copyright © Cambridge University Press 2014 

References

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